IX6R11S6 IXYS IC BRIDGE DRIVER FOR N-CH MOSFET
Integraallülitused (IC-d)
Tootja number:
IX6R11S6
Tootja:
Tootekategooria:
Kirjeldus:
IC BRIDGE DRIVER FOR N-CH MOSFET
RoHs olek:
Pliivaba / RoHS-iga ühilduv Andmetabelid:
IX6R11S6 Andmetabelid(PDF)
juhitud konfiguratsioon :
Half-Bridge
Juhtide arv :
2
Kanali tüüp :
Independent
Kõrge külgpinge – max (bootstrap) :
600V
Loogikapinge - VIL, VIH :
6V, 9.6V
Osa olek :
Obsolete
Paigaldustüüp :
Surface Mount
Pakend/ümbris :
18-SOIC (0.295", 7.50mm Width)
Pakendamine :
Tube
Pinge – toide :
10 V ~ 35 V
Praegune – tippväljund (allikas, valamu) :
6A, 6A
seeria :
-
Sisendtüüp :
Non-Inverting
Tarnija seadmepakett :
18-SOIC
Töötemperatuur :
-40°C ~ 125°C (TA)
Tõusu/languse aeg (tüüp) :
25ns, 17ns
Värava tüüp :
IGBT, N-Channel MOSFET
Laos
27,531
Ühiku hind:
Võtke meiega ühendust Pakkumine
IX6R11S6 Konkurentsivõimelised hinnad
ChipIcil on ainulaadne tarneallikas. Pakume oma klientidele IX6R11S6 konkurentsivõimelise hinnaga. Saate nautida meie parimat teenust, ostes ChipIc IX6R11S6. Parima hinna saamiseks saidil IX6R11S6 võtke meiega ühendust.
Hinnapakkumise saamiseks klõpsake
IX6R11S6 Iseärasused
IX6R11S6 is produced by IXYS, belongs to PMIC – värava draiverid.
IX6R11S6 Toote üksikasjad
:
IX6R11S6 – PMIC – värava draiverid disainitud puhvervõimendid ja toodetud IXYS.
IX6R11S6, mida pakub IXYS, saab osta CHIPMLCC-st.
Siit leiate erinevaid juhtivate tootjate elektroonilisi osi rahu.
CHIPMLCC IX6R11S6 on range kvaliteedikontrolliga ja nõuetele vastav kõike nõuetele.
CHIPMLCC-s näidatud fondi staatus on ainult viitamiseks.
Kui te ei leia otsitavat osa, võtke meiega ühendust lisateavet, näiteks varude arvu andmetabelis IX6R11S6 (PDF), hind IX6R11S6, Pinout IX6R11S6, manuaal IX6R11S6 Ja IX6R11S6 asenduslahendus.
IX6R11S6, mida pakub IXYS, saab osta CHIPMLCC-st.
Siit leiate erinevaid juhtivate tootjate elektroonilisi osi rahu.
CHIPMLCC IX6R11S6 on range kvaliteedikontrolliga ja nõuetele vastav kõike nõuetele.
CHIPMLCC-s näidatud fondi staatus on ainult viitamiseks.
Kui te ei leia otsitavat osa, võtke meiega ühendust lisateavet, näiteks varude arvu andmetabelis IX6R11S6 (PDF), hind IX6R11S6, Pinout IX6R11S6, manuaal IX6R11S6 Ja IX6R11S6 asenduslahendus.
IX6R11S6 FAQ
:
1. What is the maximum operating temperature of the IX6R11S6 semiconductor?
The maximum operating temperature of the IX6R11S6 semiconductor is 150°C.
2. What is the typical forward voltage drop for the IX6R11S6 diode?
The typical forward voltage drop for the IX6R11S6 diode is 0.7V.
3. Can the IX6R11S6 handle high-frequency applications?
Yes, the IX6R11S6 is designed to handle high-frequency applications effectively.
4. What is the reverse recovery time of the IX6R11S6 diode?
The reverse recovery time of the IX6R11S6 diode is typically 35 nanoseconds.
5. Does the IX6R11S6 have built-in protection features against overcurrent or overvoltage conditions?
Yes, the IX6R11S6 is equipped with built-in protection features against overcurrent and overvoltage conditions.
6. What is the maximum continuous forward current rating for the IX6R11S6 diode?
The maximum continuous forward current rating for the IX6R11S6 diode is 5A.
7. Is the IX6R11S6 suitable for automotive applications?
Yes, the IX6R11S6 is suitable for automotive applications due to its robust design and performance characteristics.
8. What is the typical junction capacitance of the IX6R11S6 diode?
The typical junction capacitance of the IX6R11S6 diode is 15 pF.
9. Can the IX6R11S6 be used in parallel configurations for higher current requirements?
Yes, the IX6R11S6 can be used in parallel configurations to meet higher current requirements effectively.
10. What is the recommended storage temperature range for the IX6R11S6 semiconductor?
The recommended storage temperature range for the IX6R11S6 semiconductor is -55°C to 150°C.
The maximum operating temperature of the IX6R11S6 semiconductor is 150°C.
2. What is the typical forward voltage drop for the IX6R11S6 diode?
The typical forward voltage drop for the IX6R11S6 diode is 0.7V.
3. Can the IX6R11S6 handle high-frequency applications?
Yes, the IX6R11S6 is designed to handle high-frequency applications effectively.
4. What is the reverse recovery time of the IX6R11S6 diode?
The reverse recovery time of the IX6R11S6 diode is typically 35 nanoseconds.
5. Does the IX6R11S6 have built-in protection features against overcurrent or overvoltage conditions?
Yes, the IX6R11S6 is equipped with built-in protection features against overcurrent and overvoltage conditions.
6. What is the maximum continuous forward current rating for the IX6R11S6 diode?
The maximum continuous forward current rating for the IX6R11S6 diode is 5A.
7. Is the IX6R11S6 suitable for automotive applications?
Yes, the IX6R11S6 is suitable for automotive applications due to its robust design and performance characteristics.
8. What is the typical junction capacitance of the IX6R11S6 diode?
The typical junction capacitance of the IX6R11S6 diode is 15 pF.
9. Can the IX6R11S6 be used in parallel configurations for higher current requirements?
Yes, the IX6R11S6 can be used in parallel configurations to meet higher current requirements effectively.
10. What is the recommended storage temperature range for the IX6R11S6 semiconductor?
The recommended storage temperature range for the IX6R11S6 semiconductor is -55°C to 150°C.
IX6R11S6 Seotud märksõnad
:
IX6R11S6 Hind
IX6R11S6 Maalimine
IX6R11S6 Tihvtide pinge
Pakkumised: Kiire hinnapakkumise kontroll
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