SI4058DY-T1-GE3 Vishay Siliconix MOSFET N-CH 100V 10.3A 8SOIC
Diskreetsed pooljuhid
Tootja number:
SI4058DY-T1-GE3
Tootja:
Tootekategooria:
Kirjeldus:
MOSFET N-CH 100V 10.3A 8SOIC
RoHs olek:
Andmetabelid:
SI4058DY-T1-GE3 Andmetabelid(PDF)
Ajami pinge (maksimaalne Rds sees, minimaalne Rds sees) :
4.5V, 10V
Äravoolu allika pinge (Vdss) :
100V
FET tüüp :
N-Channel
FET-funktsioon :
-
Osa olek :
Active
Paigaldustüüp :
Surface Mount
Pakend/ümbris :
8-SOIC (0.154", 3.90mm Width)
Pakendamine :
Tape & Reel (TR)
Rds sees (maksimaalne) @ Id, Vgs :
26 mOhm @ 10A, 10V
seeria :
-
Sisendmahtuvus (Ciss) (maksimaalne) @ Vds :
690pF @ 50V
Tarnija seadmepakett :
8-SOIC
Tehnoloogia :
MOSFET (Metal Oxide)
Töötemperatuur :
-55°C ~ 150°C (TJ)
Värava laadimine (Qg) (maksimaalne) @ Vgs :
18nC @ 10V
Vgs (maksimaalne) :
±20V
Vgs(th) (Max) @ Id :
2.8V @ 250µA
Võimsuse hajumine (maksimaalne) :
5.6W (Tc)
Vooluvool – pidev äravool (Id) @ 25°C :
10.3A (Tc)
Laos
25,969
Ühiku hind:
Võtke meiega ühendust Pakkumine
SI4058DY-T1-GE3 Konkurentsivõimelised hinnad
ChipIcil on ainulaadne tarneallikas. Pakume oma klientidele SI4058DY-T1-GE3 konkurentsivõimelise hinnaga. Saate nautida meie parimat teenust, ostes ChipIc SI4058DY-T1-GE3. Parima hinna saamiseks saidil SI4058DY-T1-GE3 võtke meiega ühendust.
Hinnapakkumise saamiseks klõpsake
SI4058DY-T1-GE3 Iseärasused
SI4058DY-T1-GE3 is produced by Vishay Siliconix, belongs to Transistorid - väljatransistorid, MOSFETid - üksikud.
SI4058DY-T1-GE3 Toote üksikasjad
:
SI4058DY-T1-GE3 – Transistorid - väljatransistorid, MOSFETid - üksikud disainitud puhvervõimendid ja toodetud Vishay Siliconix.
SI4058DY-T1-GE3, mida pakub Vishay Siliconix, saab osta CHIPMLCC-st.
Siit leiate erinevaid juhtivate tootjate elektroonilisi osi rahu.
CHIPMLCC SI4058DY-T1-GE3 on range kvaliteedikontrolliga ja nõuetele vastav kõike nõuetele.
CHIPMLCC-s näidatud fondi staatus on ainult viitamiseks.
Kui te ei leia otsitavat osa, võtke meiega ühendust lisateavet, näiteks varude arvu andmetabelis SI4058DY-T1-GE3 (PDF), hind SI4058DY-T1-GE3, Pinout SI4058DY-T1-GE3, manuaal SI4058DY-T1-GE3 Ja SI4058DY-T1-GE3 asenduslahendus.
SI4058DY-T1-GE3, mida pakub Vishay Siliconix, saab osta CHIPMLCC-st.
Siit leiate erinevaid juhtivate tootjate elektroonilisi osi rahu.
CHIPMLCC SI4058DY-T1-GE3 on range kvaliteedikontrolliga ja nõuetele vastav kõike nõuetele.
CHIPMLCC-s näidatud fondi staatus on ainult viitamiseks.
Kui te ei leia otsitavat osa, võtke meiega ühendust lisateavet, näiteks varude arvu andmetabelis SI4058DY-T1-GE3 (PDF), hind SI4058DY-T1-GE3, Pinout SI4058DY-T1-GE3, manuaal SI4058DY-T1-GE3 Ja SI4058DY-T1-GE3 asenduslahendus.
SI4058DY-T1-GE3 FAQ
:
1. What is the maximum drain-source voltage for SI4058DY-T1-GE3?
The maximum drain-source voltage for SI4058DY-T1-GE3 is 30V.
2. What is the continuous drain current rating for SI4058DY-T1-GE3?
The continuous drain current rating for SI4058DY-T1-GE3 is 9.5A.
3. What is the on-resistance of SI4058DY-T1-GE3 at Vgs = 10V?
The on-resistance of SI4058DY-T1-GE3 at Vgs = 10V is typically 7.5mΩ.
4. What is the threshold voltage for SI4058DY-T1-GE3?
The threshold voltage for SI4058DY-T1-GE3 is typically 1.5V.
5. What is the maximum junction temperature for SI4058DY-T1-GE3?
The maximum junction temperature for SI4058DY-T1-GE3 is 150°C.
6. What is the gate-source voltage (Vgs) for SI4058DY-T1-GE3?
The gate-source voltage (Vgs) for SI4058DY-T1-GE3 is ±20V.
7. What is the input capacitance of SI4058DY-T1-GE3?
The input capacitance of SI4058DY-T1-GE3 is typically 2300pF.
8. What is the total gate charge (Qg) for SI4058DY-T1-GE3?
The total gate charge (Qg) for SI4058DY-T1-GE3 is typically 22nC.
9. What is the output capacitance (Coss) of SI4058DY-T1-GE3?
The output capacitance (Coss) of SI4058DY-T1-GE3 is typically 420pF.
10. What is the reverse transfer capacitance (Crss) of SI4058DY-T1-GE3?
The reverse transfer capacitance (Crss) of SI4058DY-T1-GE3 is typically 60pF.
The maximum drain-source voltage for SI4058DY-T1-GE3 is 30V.
2. What is the continuous drain current rating for SI4058DY-T1-GE3?
The continuous drain current rating for SI4058DY-T1-GE3 is 9.5A.
3. What is the on-resistance of SI4058DY-T1-GE3 at Vgs = 10V?
The on-resistance of SI4058DY-T1-GE3 at Vgs = 10V is typically 7.5mΩ.
4. What is the threshold voltage for SI4058DY-T1-GE3?
The threshold voltage for SI4058DY-T1-GE3 is typically 1.5V.
5. What is the maximum junction temperature for SI4058DY-T1-GE3?
The maximum junction temperature for SI4058DY-T1-GE3 is 150°C.
6. What is the gate-source voltage (Vgs) for SI4058DY-T1-GE3?
The gate-source voltage (Vgs) for SI4058DY-T1-GE3 is ±20V.
7. What is the input capacitance of SI4058DY-T1-GE3?
The input capacitance of SI4058DY-T1-GE3 is typically 2300pF.
8. What is the total gate charge (Qg) for SI4058DY-T1-GE3?
The total gate charge (Qg) for SI4058DY-T1-GE3 is typically 22nC.
9. What is the output capacitance (Coss) of SI4058DY-T1-GE3?
The output capacitance (Coss) of SI4058DY-T1-GE3 is typically 420pF.
10. What is the reverse transfer capacitance (Crss) of SI4058DY-T1-GE3?
The reverse transfer capacitance (Crss) of SI4058DY-T1-GE3 is typically 60pF.
SI4058DY-T1-GE3 Seotud märksõnad
:
SI4058DY-T1-GE3 Hind
SI4058DY-T1-GE3 Maalimine
SI4058DY-T1-GE3 Tihvtide pinge
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