AS4C512M16D3L-12BIN Alliance Memory, Inc. IC SDRAM 8GBIT 800MHZ 96BGA
Integraallülitused (IC-d)
Tootja number:
AS4C512M16D3L-12BIN
Tootja:
Tootekategooria:
Kirjeldus:
IC SDRAM 8GBIT 800MHZ 96BGA
RoHs olek:

Andmetabelid:
Juurdepääsu aeg :
13.75ns
Kella sagedus :
800MHz
Mälu liides :
Parallel
Mälu suurus :
8Gb (512M x 16)
Mälu tüüp :
Volatile
Mälu vorming :
DRAM
Osa olek :
Active
Paigaldustüüp :
Surface Mount
Pakend/ümbris :
96-TFBGA
Pakendamine :
Tray
Pinge – toide :
1.283 V ~ 1.45 V
seeria :
-
Tarnija seadmepakett :
96-FBGA (14x9)
Tehnoloogia :
SDRAM - DDR3L
Töötemperatuur :
-40°C ~ 95°C (TC)
Tsükli aja kirjutamine – sõna, leht :
15ns
Laos
54,793
Ühiku hind:
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AS4C512M16D3L-12BIN Konkurentsivõimelised hinnad
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AS4C512M16D3L-12BIN Iseärasused
AS4C512M16D3L-12BIN is produced by Alliance Memory, Inc., belongs to Mälu.
AS4C512M16D3L-12BIN Toote üksikasjad
:
AS4C512M16D3L-12BIN – Mälu disainitud puhvervõimendid ja toodetud Alliance Memory, Inc..
AS4C512M16D3L-12BIN, mida pakub Alliance Memory, Inc., saab osta CHIPMLCC-st.
Siit leiate erinevaid juhtivate tootjate elektroonilisi osi rahu.
CHIPMLCC AS4C512M16D3L-12BIN on range kvaliteedikontrolliga ja nõuetele vastav kõike nõuetele.
CHIPMLCC-s näidatud fondi staatus on ainult viitamiseks.
Kui te ei leia otsitavat osa, võtke meiega ühendust lisateavet, näiteks varude arvu andmetabelis AS4C512M16D3L-12BIN (PDF), hind AS4C512M16D3L-12BIN, Pinout AS4C512M16D3L-12BIN, manuaal AS4C512M16D3L-12BIN Ja AS4C512M16D3L-12BIN asenduslahendus.
AS4C512M16D3L-12BIN, mida pakub Alliance Memory, Inc., saab osta CHIPMLCC-st.
Siit leiate erinevaid juhtivate tootjate elektroonilisi osi rahu.
CHIPMLCC AS4C512M16D3L-12BIN on range kvaliteedikontrolliga ja nõuetele vastav kõike nõuetele.
CHIPMLCC-s näidatud fondi staatus on ainult viitamiseks.
Kui te ei leia otsitavat osa, võtke meiega ühendust lisateavet, näiteks varude arvu andmetabelis AS4C512M16D3L-12BIN (PDF), hind AS4C512M16D3L-12BIN, Pinout AS4C512M16D3L-12BIN, manuaal AS4C512M16D3L-12BIN Ja AS4C512M16D3L-12BIN asenduslahendus.
AS4C512M16D3L-12BIN FAQ
:
1. What is the maximum operating frequency of the AS4C512M16D3L-12BIN?
The maximum operating frequency of the AS4C512M16D3L-12BIN is 1200 MHz.
2. What is the power supply voltage range for this semiconductor?
The power supply voltage range for the AS4C512M16D3L-12BIN is 1.14V to 1.26V.
3. Can you provide the typical standby current for this device?
The typical standby current for the AS4C512M16D3L-12BIN is 30 mA.
4. What are the operating temperature ranges for this semiconductor?
The operating temperature range for the AS4C512M16D3L-12BIN is -40°C to 95°C.
5. Does this semiconductor support burst read and write operations?
Yes, the AS4C512M16D3L-12BIN supports burst read and write operations.
6. What is the data retention time for this device?
The data retention time for the AS4C512M16D3L-12BIN is 10 years.
7. Can you provide the refresh rate specification for this semiconductor?
The refresh rate specification for the AS4C512M16D3L-12BIN is 8K/32ms.
8. What is the package type for this memory device?
The AS4C512M16D3L-12BIN comes in a 96-ball FBGA package.
9. Is there a recommended layout design for optimal performance?
Yes, please refer to the datasheet for the recommended layout design guidelines.
10. Are there any known reliability issues or failure modes associated with this semiconductor?
There are no known reliability issues or failure modes associated with the AS4C512M16D3L-12BIN at this time.
The maximum operating frequency of the AS4C512M16D3L-12BIN is 1200 MHz.
2. What is the power supply voltage range for this semiconductor?
The power supply voltage range for the AS4C512M16D3L-12BIN is 1.14V to 1.26V.
3. Can you provide the typical standby current for this device?
The typical standby current for the AS4C512M16D3L-12BIN is 30 mA.
4. What are the operating temperature ranges for this semiconductor?
The operating temperature range for the AS4C512M16D3L-12BIN is -40°C to 95°C.
5. Does this semiconductor support burst read and write operations?
Yes, the AS4C512M16D3L-12BIN supports burst read and write operations.
6. What is the data retention time for this device?
The data retention time for the AS4C512M16D3L-12BIN is 10 years.
7. Can you provide the refresh rate specification for this semiconductor?
The refresh rate specification for the AS4C512M16D3L-12BIN is 8K/32ms.
8. What is the package type for this memory device?
The AS4C512M16D3L-12BIN comes in a 96-ball FBGA package.
9. Is there a recommended layout design for optimal performance?
Yes, please refer to the datasheet for the recommended layout design guidelines.
10. Are there any known reliability issues or failure modes associated with this semiconductor?
There are no known reliability issues or failure modes associated with the AS4C512M16D3L-12BIN at this time.
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