NE3210S01-T1B CEL FET RF 4V 12GHZ S01
Diskreetsed pooljuhid
Tootja number:
NE3210S01-T1B
Tootja:
Tootekategooria:
Kirjeldus:
FET RF 4V 12GHZ S01
RoHs olek:
Pliivaba / RoHS-iga ühilduv Andmetabelid:
NE3210S01-T1B Andmetabelid(PDF)
Kasu :
13.5dB
Müra joonis :
0.35dB
Osa olek :
Obsolete
Pakend/ümbris :
4-SMD
Pakendamine :
Tape & Reel (TR)
Pinge – nimiväärtus :
4V
Pinge – test :
2V
Praegune reiting :
15mA
Praegune – Test :
10mA
Sagedus :
12GHz
seeria :
-
Tarnija seadmepakett :
SMD
Transistori tüüp :
HFET
Võimsus :
-
Laos
54,691
Ühiku hind:
Võtke meiega ühendust Pakkumine
NE3210S01-T1B Konkurentsivõimelised hinnad
ChipIcil on ainulaadne tarneallikas. Pakume oma klientidele NE3210S01-T1B konkurentsivõimelise hinnaga. Saate nautida meie parimat teenust, ostes ChipIc NE3210S01-T1B. Parima hinna saamiseks saidil NE3210S01-T1B võtke meiega ühendust.
Hinnapakkumise saamiseks klõpsake
NE3210S01-T1B Iseärasused
NE3210S01-T1B is produced by CEL, belongs to Transistorid - väljatransistorid, MOSFETid - RF.
NE3210S01-T1B Toote üksikasjad
:
NE3210S01-T1B – Transistorid - väljatransistorid, MOSFETid - RF disainitud puhvervõimendid ja toodetud CEL.
NE3210S01-T1B, mida pakub CEL, saab osta CHIPMLCC-st.
Siit leiate erinevaid juhtivate tootjate elektroonilisi osi rahu.
CHIPMLCC NE3210S01-T1B on range kvaliteedikontrolliga ja nõuetele vastav kõike nõuetele.
CHIPMLCC-s näidatud fondi staatus on ainult viitamiseks.
Kui te ei leia otsitavat osa, võtke meiega ühendust lisateavet, näiteks varude arvu andmetabelis NE3210S01-T1B (PDF), hind NE3210S01-T1B, Pinout NE3210S01-T1B, manuaal NE3210S01-T1B Ja NE3210S01-T1B asenduslahendus.
NE3210S01-T1B, mida pakub CEL, saab osta CHIPMLCC-st.
Siit leiate erinevaid juhtivate tootjate elektroonilisi osi rahu.
CHIPMLCC NE3210S01-T1B on range kvaliteedikontrolliga ja nõuetele vastav kõike nõuetele.
CHIPMLCC-s näidatud fondi staatus on ainult viitamiseks.
Kui te ei leia otsitavat osa, võtke meiega ühendust lisateavet, näiteks varude arvu andmetabelis NE3210S01-T1B (PDF), hind NE3210S01-T1B, Pinout NE3210S01-T1B, manuaal NE3210S01-T1B Ja NE3210S01-T1B asenduslahendus.
NE3210S01-T1B FAQ
:
1. What is the maximum operating frequency of the NE3210S01-T1B semiconductor?
The maximum operating frequency of the NE3210S01-T1B semiconductor is 6 GHz.
2. What is the typical input power for the NE3210S01-T1B semiconductor?
The typical input power for the NE3210S01-T1B semiconductor is 20 dBm.
3. What is the noise figure of the NE3210S01-T1B semiconductor?
The noise figure of the NE3210S01-T1B semiconductor is typically 1.5 dB.
4. Can the NE3210S01-T1B semiconductor be used in high-temperature environments?
Yes, the NE3210S01-T1B semiconductor is designed to operate reliably in high-temperature environments up to 125°C.
5. What is the recommended supply voltage for the NE3210S01-T1B semiconductor?
The recommended supply voltage for the NE3210S01-T1B semiconductor is 5V.
6. Does the NE3210S01-T1B semiconductor require an external matching network?
No, the NE3210S01-T1B semiconductor is internally matched and does not require an external matching network.
7. What is the gain of the NE3210S01-T1B semiconductor?
The gain of the NE3210S01-T1B semiconductor is typically 15 dB.
8. Is the NE3210S01-T1B semiconductor RoHS compliant?
Yes, the NE3210S01-T1B semiconductor is RoHS compliant.
9. What is the package type of the NE3210S01-T1B semiconductor?
The NE3210S01-T1B semiconductor is available in a SOT-89 package.
10. Can the NE3210S01-T1B semiconductor be used in wireless communication applications?
Yes, the NE3210S01-T1B semiconductor is suitable for use in various wireless communication applications including cellular and Wi-Fi.
The maximum operating frequency of the NE3210S01-T1B semiconductor is 6 GHz.
2. What is the typical input power for the NE3210S01-T1B semiconductor?
The typical input power for the NE3210S01-T1B semiconductor is 20 dBm.
3. What is the noise figure of the NE3210S01-T1B semiconductor?
The noise figure of the NE3210S01-T1B semiconductor is typically 1.5 dB.
4. Can the NE3210S01-T1B semiconductor be used in high-temperature environments?
Yes, the NE3210S01-T1B semiconductor is designed to operate reliably in high-temperature environments up to 125°C.
5. What is the recommended supply voltage for the NE3210S01-T1B semiconductor?
The recommended supply voltage for the NE3210S01-T1B semiconductor is 5V.
6. Does the NE3210S01-T1B semiconductor require an external matching network?
No, the NE3210S01-T1B semiconductor is internally matched and does not require an external matching network.
7. What is the gain of the NE3210S01-T1B semiconductor?
The gain of the NE3210S01-T1B semiconductor is typically 15 dB.
8. Is the NE3210S01-T1B semiconductor RoHS compliant?
Yes, the NE3210S01-T1B semiconductor is RoHS compliant.
9. What is the package type of the NE3210S01-T1B semiconductor?
The NE3210S01-T1B semiconductor is available in a SOT-89 package.
10. Can the NE3210S01-T1B semiconductor be used in wireless communication applications?
Yes, the NE3210S01-T1B semiconductor is suitable for use in various wireless communication applications including cellular and Wi-Fi.
NE3210S01-T1B Seotud märksõnad
:
NE3210S01-T1B Hind
NE3210S01-T1B Maalimine
NE3210S01-T1B Tihvtide pinge
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