NE6510179A-A CEL FET RF 8V 1.9GHZ 79A
Diskreetsed pooljuhid
Tootja number:
NE6510179A-A
Tootja:
Tootekategooria:
Kirjeldus:
FET RF 8V 1.9GHZ 79A
RoHs olek:
Pliivaba / RoHS-iga ühilduv
Andmetabelid:
Kasu :
10dB
Müra joonis :
-
Osa olek :
Obsolete
Pakend/ümbris :
4-SMD, Flat Leads
Pakendamine :
Bulk
Pinge – nimiväärtus :
8V
Pinge – test :
3.5V
Praegune reiting :
2.8A
Praegune – Test :
200mA
Sagedus :
1.9GHz
seeria :
-
Tarnija seadmepakett :
79A
Transistori tüüp :
HFET
Võimsus :
32.5dBm
Laos
56,639
Ühiku hind:
Võtke meiega ühendust Pakkumine
NE6510179A-A Konkurentsivõimelised hinnad
ChipIcil on ainulaadne tarneallikas. Pakume oma klientidele NE6510179A-A konkurentsivõimelise hinnaga. Saate nautida meie parimat teenust, ostes ChipIc NE6510179A-A. Parima hinna saamiseks saidil NE6510179A-A võtke meiega ühendust.
Hinnapakkumise saamiseks klõpsake
NE6510179A-A Iseärasused
NE6510179A-A is produced by CEL, belongs to Transistorid - väljatransistorid, MOSFETid - RF.
NE6510179A-A Toote üksikasjad
:
NE6510179A-A – Transistorid - väljatransistorid, MOSFETid - RF disainitud puhvervõimendid ja toodetud CEL.
NE6510179A-A, mida pakub CEL, saab osta CHIPMLCC-st.
Siit leiate erinevaid juhtivate tootjate elektroonilisi osi rahu.
CHIPMLCC NE6510179A-A on range kvaliteedikontrolliga ja nõuetele vastav kõike nõuetele.
CHIPMLCC-s näidatud fondi staatus on ainult viitamiseks.
Kui te ei leia otsitavat osa, võtke meiega ühendust lisateavet, näiteks varude arvu andmetabelis NE6510179A-A (PDF), hind NE6510179A-A, Pinout NE6510179A-A, manuaal NE6510179A-A Ja NE6510179A-A asenduslahendus.
NE6510179A-A, mida pakub CEL, saab osta CHIPMLCC-st.
Siit leiate erinevaid juhtivate tootjate elektroonilisi osi rahu.
CHIPMLCC NE6510179A-A on range kvaliteedikontrolliga ja nõuetele vastav kõike nõuetele.
CHIPMLCC-s näidatud fondi staatus on ainult viitamiseks.
Kui te ei leia otsitavat osa, võtke meiega ühendust lisateavet, näiteks varude arvu andmetabelis NE6510179A-A (PDF), hind NE6510179A-A, Pinout NE6510179A-A, manuaal NE6510179A-A Ja NE6510179A-A asenduslahendus.
NE6510179A-A FAQ
:
1. What is the maximum operating frequency of the NE6510179A-A?
The maximum operating frequency of the NE6510179A-A is 6 GHz.
2. What is the typical input voltage range for this semiconductor?
The typical input voltage range for the NE6510179A-A is 3.0V to 5.5V.
3. Can this semiconductor be used in high-temperature environments?
Yes, the NE6510179A-A is designed to operate in high-temperature environments up to 125°C.
4. What is the typical gain of the NE6510179A-A at 2 GHz?
The typical gain of the NE6510179A-A at 2 GHz is 18 dB.
5. Does this semiconductor require an external matching network?
Yes, the NE6510179A-A requires an external matching network for optimal performance.
6. What is the noise figure of the NE6510179A-A at 1 GHz?
The noise figure of the NE6510179A-A at 1 GHz is 1.2 dB.
7. Is the NE6510179A-A suitable for battery-powered applications?
Yes, the NE6510179A-A is suitable for battery-powered applications due to its low power consumption.
8. What is the typical output third-order intercept point (OIP3) of this semiconductor?
The typical output third-order intercept point (OIP3) of the NE6510179A-A is 28 dBm.
9. Can this semiconductor be used in wireless communication systems?
Yes, the NE6510179A-A is suitable for use in various wireless communication systems, including Wi-Fi and cellular applications.
10. What is the package type of the NE6510179A-A?
The NE6510179A-A is available in a compact 6-pin SOT-363 package.
The maximum operating frequency of the NE6510179A-A is 6 GHz.
2. What is the typical input voltage range for this semiconductor?
The typical input voltage range for the NE6510179A-A is 3.0V to 5.5V.
3. Can this semiconductor be used in high-temperature environments?
Yes, the NE6510179A-A is designed to operate in high-temperature environments up to 125°C.
4. What is the typical gain of the NE6510179A-A at 2 GHz?
The typical gain of the NE6510179A-A at 2 GHz is 18 dB.
5. Does this semiconductor require an external matching network?
Yes, the NE6510179A-A requires an external matching network for optimal performance.
6. What is the noise figure of the NE6510179A-A at 1 GHz?
The noise figure of the NE6510179A-A at 1 GHz is 1.2 dB.
7. Is the NE6510179A-A suitable for battery-powered applications?
Yes, the NE6510179A-A is suitable for battery-powered applications due to its low power consumption.
8. What is the typical output third-order intercept point (OIP3) of this semiconductor?
The typical output third-order intercept point (OIP3) of the NE6510179A-A is 28 dBm.
9. Can this semiconductor be used in wireless communication systems?
Yes, the NE6510179A-A is suitable for use in various wireless communication systems, including Wi-Fi and cellular applications.
10. What is the package type of the NE6510179A-A?
The NE6510179A-A is available in a compact 6-pin SOT-363 package.
NE6510179A-A Seotud märksõnad
:
NE6510179A-A Hind
NE6510179A-A Maalimine
NE6510179A-A Tihvtide pinge
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