CSD10060G Cree/Wolfspeed DIODE SCHOTTKY 600V 16.5A TO263
Diskreetsed pooljuhid
Tootja number:
CSD10060G
Tootja:
Tootekategooria:
Kirjeldus:
DIODE SCHOTTKY 600V 16.5A TO263
RoHs olek:
Pliivaba / RoHS-iga ühilduv Andmetabelid:
CSD10060G Andmetabelid(PDF)
Kiirus :
No Recovery Time > 500mA (Io)
Mahtuvus@Vr,F :
550pF @ 0V, 1MHz
Osa olek :
Obsolete
Paigaldustüüp :
Surface Mount
Pakend/ümbris :
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Pakendamine :
Tube
Pinge – alalisvoolu tagasikäik (Vr) (maksimaalne) :
600V
Pinge – edasi (Vf) (maksimaalne) @ Kui :
1.8V @ 10A
Praegune – keskmine parandatud (Io) :
16.5A
seeria :
-
Tarnija seadmepakett :
TO-263-2
Töötemperatuur – ristmik :
-55°C ~ 175°C
Vastupidine taastamise aeg (trr) :
0ns
Vool – vastupidine leke @ Vr :
200µA @ 600V
Dioodi tüüp :
Silicon Carbide Schottky
Laos
20,966
Ühiku hind:
Võtke meiega ühendust Pakkumine
CSD10060G Konkurentsivõimelised hinnad
ChipIcil on ainulaadne tarneallikas. Pakume oma klientidele CSD10060G konkurentsivõimelise hinnaga. Saate nautida meie parimat teenust, ostes ChipIc CSD10060G. Parima hinna saamiseks saidil CSD10060G võtke meiega ühendust.
Hinnapakkumise saamiseks klõpsake
CSD10060G Iseärasused
CSD10060G is produced by Cree/Wolfspeed, belongs to Dioodid - alaldid - üksikud.
CSD10060G Toote üksikasjad
:
CSD10060G – Dioodid - alaldid - üksikud disainitud puhvervõimendid ja toodetud Cree/Wolfspeed.
CSD10060G, mida pakub Cree/Wolfspeed, saab osta CHIPMLCC-st.
Siit leiate erinevaid juhtivate tootjate elektroonilisi osi rahu.
CHIPMLCC CSD10060G on range kvaliteedikontrolliga ja nõuetele vastav kõike nõuetele.
CHIPMLCC-s näidatud fondi staatus on ainult viitamiseks.
Kui te ei leia otsitavat osa, võtke meiega ühendust lisateavet, näiteks varude arvu andmetabelis CSD10060G (PDF), hind CSD10060G, Pinout CSD10060G, manuaal CSD10060G Ja CSD10060G asenduslahendus.
CSD10060G, mida pakub Cree/Wolfspeed, saab osta CHIPMLCC-st.
Siit leiate erinevaid juhtivate tootjate elektroonilisi osi rahu.
CHIPMLCC CSD10060G on range kvaliteedikontrolliga ja nõuetele vastav kõike nõuetele.
CHIPMLCC-s näidatud fondi staatus on ainult viitamiseks.
Kui te ei leia otsitavat osa, võtke meiega ühendust lisateavet, näiteks varude arvu andmetabelis CSD10060G (PDF), hind CSD10060G, Pinout CSD10060G, manuaal CSD10060G Ja CSD10060G asenduslahendus.
CSD10060G FAQ
:
1. What is the maximum continuous drain current (ID) of the CSD10060G power MOSFET?
The maximum continuous drain current (ID) of the CSD10060G power MOSFET is 100A.
2. What is the maximum drain-source voltage (VDS) rating of the CSD10060G power MOSFET?
The maximum drain-source voltage (VDS) rating of the CSD10060G power MOSFET is 600V.
3. What is the on-state resistance (RDS(on)) of the CSD10060G power MOSFET?
The on-state resistance (RDS(on)) of the CSD10060G power MOSFET is typically 0.036 ohms.
4. Can the CSD10060G power MOSFET be used in high-frequency switching applications?
Yes, the CSD10060G power MOSFET is suitable for high-frequency switching applications due to its low RDS(on) and fast switching characteristics.
5. What is the gate-source threshold voltage (VGS(th)) of the CSD10060G power MOSFET?
The gate-source threshold voltage (VGS(th)) of the CSD10060G power MOSFET is typically 2.5V.
6. Is the CSD10060G power MOSFET RoHS compliant?
Yes, the CSD10060G power MOSFET is RoHS compliant, meeting the requirements for lead-free and environmentally friendly manufacturing.
7. What is the maximum junction temperature (TJ) of the CSD10060G power MOSFET?
The maximum junction temperature (TJ) of the CSD10060G power MOSFET is 175°C.
8. Does the CSD10060G power MOSFET have built-in protection features?
Yes, the CSD10060G power MOSFET includes built-in overcurrent protection and thermal shutdown features for enhanced reliability.
9. What is the gate charge (Qg) of the CSD10060G power MOSFET?
The gate charge (Qg) of the CSD10060G power MOSFET is typically 110nC.
10. Can the CSD10060G power MOSFET be used in automotive applications?
Yes, the CSD10060G power MOSFET is suitable for automotive applications, offering high performance and reliability in harsh environments.
The maximum continuous drain current (ID) of the CSD10060G power MOSFET is 100A.
2. What is the maximum drain-source voltage (VDS) rating of the CSD10060G power MOSFET?
The maximum drain-source voltage (VDS) rating of the CSD10060G power MOSFET is 600V.
3. What is the on-state resistance (RDS(on)) of the CSD10060G power MOSFET?
The on-state resistance (RDS(on)) of the CSD10060G power MOSFET is typically 0.036 ohms.
4. Can the CSD10060G power MOSFET be used in high-frequency switching applications?
Yes, the CSD10060G power MOSFET is suitable for high-frequency switching applications due to its low RDS(on) and fast switching characteristics.
5. What is the gate-source threshold voltage (VGS(th)) of the CSD10060G power MOSFET?
The gate-source threshold voltage (VGS(th)) of the CSD10060G power MOSFET is typically 2.5V.
6. Is the CSD10060G power MOSFET RoHS compliant?
Yes, the CSD10060G power MOSFET is RoHS compliant, meeting the requirements for lead-free and environmentally friendly manufacturing.
7. What is the maximum junction temperature (TJ) of the CSD10060G power MOSFET?
The maximum junction temperature (TJ) of the CSD10060G power MOSFET is 175°C.
8. Does the CSD10060G power MOSFET have built-in protection features?
Yes, the CSD10060G power MOSFET includes built-in overcurrent protection and thermal shutdown features for enhanced reliability.
9. What is the gate charge (Qg) of the CSD10060G power MOSFET?
The gate charge (Qg) of the CSD10060G power MOSFET is typically 110nC.
10. Can the CSD10060G power MOSFET be used in automotive applications?
Yes, the CSD10060G power MOSFET is suitable for automotive applications, offering high performance and reliability in harsh environments.
CSD10060G Seotud märksõnad
:
CSD10060G Hind
CSD10060G Maalimine
CSD10060G Tihvtide pinge
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