DGD2101S8-13 Diodes Incorporated IC GATE DRVR HALF-BRIDGE 8SO
Integraallülitused (IC-d)
Tootja number:
DGD2101S8-13
Tootja:
Tootekategooria:
Kirjeldus:
IC GATE DRVR HALF-BRIDGE 8SO
RoHs olek:
Pliivaba / RoHS-iga ühilduv Andmetabelid:
DGD2101S8-13 Andmetabelid(PDF)
juhitud konfiguratsioon :
Half-Bridge
Juhtide arv :
2
Kanali tüüp :
Independent
Kõrge külgpinge – max (bootstrap) :
600V
Loogikapinge - VIL, VIH :
0.8V, 2.5V
Osa olek :
Active
Paigaldustüüp :
Surface Mount
Pakend/ümbris :
8-SOIC (0.154", 3.90mm Width)
Pakendamine :
Tape & Reel (TR)
Pinge – toide :
10 V ~ 20 V
Praegune – tippväljund (allikas, valamu) :
290mA, 600mA
seeria :
-
Sisendtüüp :
Non-Inverting
Tarnija seadmepakett :
8-SO
Töötemperatuur :
-40°C ~ 150°C (TJ)
Tõusu/languse aeg (tüüp) :
70ns, 35ns
Värava tüüp :
IGBT, N-Channel MOSFET
Laos
22,293
Ühiku hind:
Võtke meiega ühendust Pakkumine
DGD2101S8-13 Konkurentsivõimelised hinnad
ChipIcil on ainulaadne tarneallikas. Pakume oma klientidele DGD2101S8-13 konkurentsivõimelise hinnaga. Saate nautida meie parimat teenust, ostes ChipIc DGD2101S8-13. Parima hinna saamiseks saidil DGD2101S8-13 võtke meiega ühendust.
Hinnapakkumise saamiseks klõpsake
DGD2101S8-13 Iseärasused
DGD2101S8-13 is produced by Diodes Incorporated, belongs to PMIC – värava draiverid.
DGD2101S8-13 Toote üksikasjad
:
DGD2101S8-13 – PMIC – värava draiverid disainitud puhvervõimendid ja toodetud Diodes Incorporated.
DGD2101S8-13, mida pakub Diodes Incorporated, saab osta CHIPMLCC-st.
Siit leiate erinevaid juhtivate tootjate elektroonilisi osi rahu.
CHIPMLCC DGD2101S8-13 on range kvaliteedikontrolliga ja nõuetele vastav kõike nõuetele.
CHIPMLCC-s näidatud fondi staatus on ainult viitamiseks.
Kui te ei leia otsitavat osa, võtke meiega ühendust lisateavet, näiteks varude arvu andmetabelis DGD2101S8-13 (PDF), hind DGD2101S8-13, Pinout DGD2101S8-13, manuaal DGD2101S8-13 Ja DGD2101S8-13 asenduslahendus.
DGD2101S8-13, mida pakub Diodes Incorporated, saab osta CHIPMLCC-st.
Siit leiate erinevaid juhtivate tootjate elektroonilisi osi rahu.
CHIPMLCC DGD2101S8-13 on range kvaliteedikontrolliga ja nõuetele vastav kõike nõuetele.
CHIPMLCC-s näidatud fondi staatus on ainult viitamiseks.
Kui te ei leia otsitavat osa, võtke meiega ühendust lisateavet, näiteks varude arvu andmetabelis DGD2101S8-13 (PDF), hind DGD2101S8-13, Pinout DGD2101S8-13, manuaal DGD2101S8-13 Ja DGD2101S8-13 asenduslahendus.
DGD2101S8-13 FAQ
:
1. What is the maximum drain-source voltage for DGD2101S8-13?
The maximum drain-source voltage for DGD2101S8-13 is 100V.
2. What is the typical on-state resistance of DGD2101S8-13?
The typical on-state resistance of DGD2101S8-13 is 20mΩ.
3. What is the maximum continuous drain current for DGD2101S8-13?
The maximum continuous drain current for DGD2101S8-13 is 120A.
4. What is the gate threshold voltage of DGD2101S8-13?
The gate threshold voltage of DGD2101S8-13 is typically 2.5V.
5. What is the maximum junction temperature for DGD2101S8-13?
The maximum junction temperature for DGD2101S8-13 is 175°C.
6. What is the input capacitance of DGD2101S8-13?
The input capacitance of DGD2101S8-13 is typically 6800pF.
7. What is the total gate charge of DGD2101S8-13?
The total gate charge of DGD2101S8-13 is typically 60nC.
8. What is the maximum power dissipation of DGD2101S8-13?
The maximum power dissipation of DGD2101S8-13 is 200W.
9. What is the operating junction and storage temperature range for DGD2101S8-13?
The operating junction and storage temperature range for DGD2101S8-13 is -55°C to 175°C.
10. What is the package type of DGD2101S8-13?
DGD2101S8-13 comes in a TO-252-3 package.
The maximum drain-source voltage for DGD2101S8-13 is 100V.
2. What is the typical on-state resistance of DGD2101S8-13?
The typical on-state resistance of DGD2101S8-13 is 20mΩ.
3. What is the maximum continuous drain current for DGD2101S8-13?
The maximum continuous drain current for DGD2101S8-13 is 120A.
4. What is the gate threshold voltage of DGD2101S8-13?
The gate threshold voltage of DGD2101S8-13 is typically 2.5V.
5. What is the maximum junction temperature for DGD2101S8-13?
The maximum junction temperature for DGD2101S8-13 is 175°C.
6. What is the input capacitance of DGD2101S8-13?
The input capacitance of DGD2101S8-13 is typically 6800pF.
7. What is the total gate charge of DGD2101S8-13?
The total gate charge of DGD2101S8-13 is typically 60nC.
8. What is the maximum power dissipation of DGD2101S8-13?
The maximum power dissipation of DGD2101S8-13 is 200W.
9. What is the operating junction and storage temperature range for DGD2101S8-13?
The operating junction and storage temperature range for DGD2101S8-13 is -55°C to 175°C.
10. What is the package type of DGD2101S8-13?
DGD2101S8-13 comes in a TO-252-3 package.
DGD2101S8-13 Seotud märksõnad
:
DGD2101S8-13 Hind
DGD2101S8-13 Maalimine
DGD2101S8-13 Tihvtide pinge
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