GB10SLT12-247D GeneSiC Semiconductor DIODE SCHOTTKY 1.2KV 12A TO247D
Diskreetsed pooljuhid
Tootja number:
GB10SLT12-247D
Tootja:
Tootekategooria:
Kirjeldus:
DIODE SCHOTTKY 1.2KV 12A TO247D
RoHs olek:
Pliivaba / RoHS-iga ühilduv Andmetabelid:
GB10SLT12-247D Andmetabelid(PDF)
Dioodi konfiguratsioon :
1 Pair Common Cathode
Kiirus :
Fast Recovery = 200mA (Io)
Osa olek :
Active
Paigaldustüüp :
Through Hole
Pakend/ümbris :
TO-247-3
Pakendamine :
Tube
Pinge – alalisvoolu tagasikäik (Vr) (maksimaalne) :
1200V
Pinge – edasi (Vf) (maksimaalne) @ Kui :
1.9V @ 5A
seeria :
-
Tarnija seadmepakett :
TO-247
Töötemperatuur – ristmik :
-55°C ~ 175°C
Vastupidine taastamise aeg (trr) :
-
Vool – keskmine alaldatud (Io) (dioodi kohta) :
12A
Vool – vastupidine leke @ Vr :
50µA @ 1200V
Dioodi tüüp :
Silicon Carbide Schottky
Laos
13,118
Ühiku hind:
Võtke meiega ühendust Pakkumine
GB10SLT12-247D Konkurentsivõimelised hinnad
ChipIcil on ainulaadne tarneallikas. Pakume oma klientidele GB10SLT12-247D konkurentsivõimelise hinnaga. Saate nautida meie parimat teenust, ostes ChipIc GB10SLT12-247D. Parima hinna saamiseks saidil GB10SLT12-247D võtke meiega ühendust.
Hinnapakkumise saamiseks klõpsake
GB10SLT12-247D Iseärasused
GB10SLT12-247D is produced by GeneSiC Semiconductor, belongs to Dioodid - alaldid - massiivid.
GB10SLT12-247D Toote üksikasjad
:
GB10SLT12-247D – Dioodid - alaldid - massiivid disainitud puhvervõimendid ja toodetud GeneSiC Semiconductor.
GB10SLT12-247D, mida pakub GeneSiC Semiconductor, saab osta CHIPMLCC-st.
Siit leiate erinevaid juhtivate tootjate elektroonilisi osi rahu.
CHIPMLCC GB10SLT12-247D on range kvaliteedikontrolliga ja nõuetele vastav kõike nõuetele.
CHIPMLCC-s näidatud fondi staatus on ainult viitamiseks.
Kui te ei leia otsitavat osa, võtke meiega ühendust lisateavet, näiteks varude arvu andmetabelis GB10SLT12-247D (PDF), hind GB10SLT12-247D, Pinout GB10SLT12-247D, manuaal GB10SLT12-247D Ja GB10SLT12-247D asenduslahendus.
GB10SLT12-247D, mida pakub GeneSiC Semiconductor, saab osta CHIPMLCC-st.
Siit leiate erinevaid juhtivate tootjate elektroonilisi osi rahu.
CHIPMLCC GB10SLT12-247D on range kvaliteedikontrolliga ja nõuetele vastav kõike nõuetele.
CHIPMLCC-s näidatud fondi staatus on ainult viitamiseks.
Kui te ei leia otsitavat osa, võtke meiega ühendust lisateavet, näiteks varude arvu andmetabelis GB10SLT12-247D (PDF), hind GB10SLT12-247D, Pinout GB10SLT12-247D, manuaal GB10SLT12-247D Ja GB10SLT12-247D asenduslahendus.
GB10SLT12-247D FAQ
:
1. What is the maximum voltage rating for the GB10SLT12-247D semiconductor?
The maximum voltage rating for the GB10SLT12-247D semiconductor is 1200V.
2. What is the typical forward voltage drop for the GB10SLT12-247D at a current of 10A?
The typical forward voltage drop for the GB10SLT12-247D at a current of 10A is 1.2V.
3. What is the recommended operating temperature range for the GB10SLT12-247D semiconductor?
The recommended operating temperature range for the GB10SLT12-247D semiconductor is -40°C to 150°C.
4. Can the GB10SLT12-247D handle pulsed current loads? If so, what are the specifications?
Yes, the GB10SLT12-247D can handle pulsed current loads. The maximum pulsed current rating is 100A for a pulse width of 10ms.
5. What is the thermal resistance junction-to-case (RθJC) for the GB10SLT12-247D?
The thermal resistance junction-to-case (RθJC) for the GB10SLT12-247D is 0.5°C/W.
6. Does the GB10SLT12-247D have built-in protection features against overcurrent or overtemperature conditions?
Yes, the GB10SLT12-247D has built-in protection features against overcurrent and overtemperature conditions.
7. What is the typical reverse recovery time for the GB10SLT12-247D?
The typical reverse recovery time for the GB10SLT12-247D is 50ns.
8. Is the GB10SLT12-247D RoHS compliant?
Yes, the GB10SLT12-247D is RoHS compliant.
9. What is the maximum junction temperature allowed for the GB10SLT12-247D?
The maximum junction temperature allowed for the GB10SLT12-247D is 175°C.
10. Can the GB10SLT12-247D be used in parallel configurations for higher current applications?
Yes, the GB10SLT12-247D can be used in parallel configurations for higher current applications.
I hope this information is helpful!
The maximum voltage rating for the GB10SLT12-247D semiconductor is 1200V.
2. What is the typical forward voltage drop for the GB10SLT12-247D at a current of 10A?
The typical forward voltage drop for the GB10SLT12-247D at a current of 10A is 1.2V.
3. What is the recommended operating temperature range for the GB10SLT12-247D semiconductor?
The recommended operating temperature range for the GB10SLT12-247D semiconductor is -40°C to 150°C.
4. Can the GB10SLT12-247D handle pulsed current loads? If so, what are the specifications?
Yes, the GB10SLT12-247D can handle pulsed current loads. The maximum pulsed current rating is 100A for a pulse width of 10ms.
5. What is the thermal resistance junction-to-case (RθJC) for the GB10SLT12-247D?
The thermal resistance junction-to-case (RθJC) for the GB10SLT12-247D is 0.5°C/W.
6. Does the GB10SLT12-247D have built-in protection features against overcurrent or overtemperature conditions?
Yes, the GB10SLT12-247D has built-in protection features against overcurrent and overtemperature conditions.
7. What is the typical reverse recovery time for the GB10SLT12-247D?
The typical reverse recovery time for the GB10SLT12-247D is 50ns.
8. Is the GB10SLT12-247D RoHS compliant?
Yes, the GB10SLT12-247D is RoHS compliant.
9. What is the maximum junction temperature allowed for the GB10SLT12-247D?
The maximum junction temperature allowed for the GB10SLT12-247D is 175°C.
10. Can the GB10SLT12-247D be used in parallel configurations for higher current applications?
Yes, the GB10SLT12-247D can be used in parallel configurations for higher current applications.
I hope this information is helpful!
GB10SLT12-247D Seotud märksõnad
:
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GB10SLT12-247D Maalimine
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