BCR523E6327HTSA1 Infineon Technologies TRANS PREBIAS NPN 0.33W SOT23-3
Diskreetsed pooljuhid
Tootja number:
BCR523E6327HTSA1
Tootja:
Tootekategooria:
Kirjeldus:
TRANS PREBIAS NPN 0.33W SOT23-3
RoHs olek:
Pliivaba / RoHS-iga ühilduv Andmetabelid:
BCR523E6327HTSA1 Andmetabelid(PDF)
Alalisvoolu võimendus (hFE) (min) @ Ic, Vce :
70 @ 50mA, 5V
Osa olek :
Last Time Buy
Paigaldustüüp :
Surface Mount
Pakend/ümbris :
TO-236-3, SC-59, SOT-23-3
Pakendamine :
Tape & Reel (TR)
Pinge – kollektori emitteri rike (maksimaalne) :
50V
Praegune – kollektori katkestus (maksimaalne) :
100nA (ICBO)
Sagedus – üleminek :
100MHz
seeria :
-
Takisti – alus (R1) :
1 kOhms
Takisti – emitteri alus (R2) :
10 kOhms
Tarnija seadmepakett :
PG-SOT23-3
Transistori tüüp :
NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic :
300mV @ 2.5mA, 50mA
Võimsus – max :
330mW
Vool – koguja (Ic) (maksimaalne) :
500mA
Laos
19,668
Ühiku hind:
Võtke meiega ühendust Pakkumine
BCR523E6327HTSA1 Konkurentsivõimelised hinnad
ChipIcil on ainulaadne tarneallikas. Pakume oma klientidele BCR523E6327HTSA1 konkurentsivõimelise hinnaga. Saate nautida meie parimat teenust, ostes ChipIc BCR523E6327HTSA1. Parima hinna saamiseks saidil BCR523E6327HTSA1 võtke meiega ühendust.
Hinnapakkumise saamiseks klõpsake
BCR523E6327HTSA1 Iseärasused
BCR523E6327HTSA1 is produced by Infineon Technologies, belongs to Transistorid – bipolaarsed (BJT) – üksikud, eelpingestatud.
BCR523E6327HTSA1 Toote üksikasjad
:
BCR523E6327HTSA1 – Transistorid – bipolaarsed (BJT) – üksikud, eelpingestatud disainitud puhvervõimendid ja toodetud Infineon Technologies.
BCR523E6327HTSA1, mida pakub Infineon Technologies, saab osta CHIPMLCC-st.
Siit leiate erinevaid juhtivate tootjate elektroonilisi osi rahu.
CHIPMLCC BCR523E6327HTSA1 on range kvaliteedikontrolliga ja nõuetele vastav kõike nõuetele.
CHIPMLCC-s näidatud fondi staatus on ainult viitamiseks.
Kui te ei leia otsitavat osa, võtke meiega ühendust lisateavet, näiteks varude arvu andmetabelis BCR523E6327HTSA1 (PDF), hind BCR523E6327HTSA1, Pinout BCR523E6327HTSA1, manuaal BCR523E6327HTSA1 Ja BCR523E6327HTSA1 asenduslahendus.
BCR523E6327HTSA1, mida pakub Infineon Technologies, saab osta CHIPMLCC-st.
Siit leiate erinevaid juhtivate tootjate elektroonilisi osi rahu.
CHIPMLCC BCR523E6327HTSA1 on range kvaliteedikontrolliga ja nõuetele vastav kõike nõuetele.
CHIPMLCC-s näidatud fondi staatus on ainult viitamiseks.
Kui te ei leia otsitavat osa, võtke meiega ühendust lisateavet, näiteks varude arvu andmetabelis BCR523E6327HTSA1 (PDF), hind BCR523E6327HTSA1, Pinout BCR523E6327HTSA1, manuaal BCR523E6327HTSA1 Ja BCR523E6327HTSA1 asenduslahendus.
BCR523E6327HTSA1 FAQ
:
1. What is the maximum collector current (IC) rating for BCR523E6327HTSA1?
The maximum collector current (IC) rating for BCR523E6327HTSA1 is 100 mA.
2. What is the maximum emitter-base voltage (Veb) for BCR523E6327HTSA1?
The maximum emitter-base voltage (Veb) for BCR523E6327HTSA1 is 5 V.
3. What is the maximum power dissipation (Ptot) for BCR523E6327HTSA1?
The maximum power dissipation (Ptot) for BCR523E6327HTSA1 is 200 mW.
4. What is the typical DC current gain (hFE) for BCR523E6327HTSA1?
The typical DC current gain (hFE) for BCR523E6327HTSA1 is 100-600.
5. What is the maximum operating temperature (Tj) for BCR523E6327HTSA1?
The maximum operating temperature (Tj) for BCR523E6327HTSA1 is 150°C.
6. What is the package type for BCR523E6327HTSA1?
BCR523E6327HTSA1 comes in a SOT-23 package.
7. What is the storage temperature range for BCR523E6327HTSA1?
The storage temperature range for BCR523E6327HTSA1 is -55°C to 150°C.
8. What is the typical base-emitter saturation voltage (VBEsat) for BCR523E6327HTSA1?
The typical base-emitter saturation voltage (VBEsat) for BCR523E6327HTSA1 is 0.9 V.
9. What is the typical base-emitter on-state voltage (VBEon) for BCR523E6327HTSA1?
The typical base-emitter on-state voltage (VBEon) for BCR523E6327HTSA1 is 0.75 V.
10. What is the typical base-emitter cut-off current (ICEO) for BCR523E6327HTSA1?
The typical base-emitter cut-off current (ICEO) for BCR523E6327HTSA1 is 100 nA.
The maximum collector current (IC) rating for BCR523E6327HTSA1 is 100 mA.
2. What is the maximum emitter-base voltage (Veb) for BCR523E6327HTSA1?
The maximum emitter-base voltage (Veb) for BCR523E6327HTSA1 is 5 V.
3. What is the maximum power dissipation (Ptot) for BCR523E6327HTSA1?
The maximum power dissipation (Ptot) for BCR523E6327HTSA1 is 200 mW.
4. What is the typical DC current gain (hFE) for BCR523E6327HTSA1?
The typical DC current gain (hFE) for BCR523E6327HTSA1 is 100-600.
5. What is the maximum operating temperature (Tj) for BCR523E6327HTSA1?
The maximum operating temperature (Tj) for BCR523E6327HTSA1 is 150°C.
6. What is the package type for BCR523E6327HTSA1?
BCR523E6327HTSA1 comes in a SOT-23 package.
7. What is the storage temperature range for BCR523E6327HTSA1?
The storage temperature range for BCR523E6327HTSA1 is -55°C to 150°C.
8. What is the typical base-emitter saturation voltage (VBEsat) for BCR523E6327HTSA1?
The typical base-emitter saturation voltage (VBEsat) for BCR523E6327HTSA1 is 0.9 V.
9. What is the typical base-emitter on-state voltage (VBEon) for BCR523E6327HTSA1?
The typical base-emitter on-state voltage (VBEon) for BCR523E6327HTSA1 is 0.75 V.
10. What is the typical base-emitter cut-off current (ICEO) for BCR523E6327HTSA1?
The typical base-emitter cut-off current (ICEO) for BCR523E6327HTSA1 is 100 nA.
BCR523E6327HTSA1 Seotud märksõnad
:
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