1214-110M Microsemi Corporation TRANS RF BIPO 270W 8A 55KT1
Diskreetsed pooljuhid
Tootja number:
1214-110M
Tootja:
Tootekategooria:
Kirjeldus:
TRANS RF BIPO 270W 8A 55KT1
RoHs olek:
Pliivaba / RoHS-iga ühilduv Andmetabelid:
1214-110M Andmetabelid(PDF)
Alalisvoolu võimendus (hFE) (min) @ Ic, Vce :
-
Kasu :
7.4dB
Müra näitaja (dB tüüp @ f) :
-
Osa olek :
Active
Paigaldustüüp :
Chassis Mount
Pakend/ümbris :
55KT
Pakendamine :
Bulk
Pinge – kollektori emitteri rike (maksimaalne) :
75V
Sagedus – üleminek :
1.2GHz ~ 1.4GHz
seeria :
-
Tarnija seadmepakett :
55KT
Töötemperatuur :
200°C (TJ)
Transistori tüüp :
NPN
Võimsus – max :
270W
Vool – koguja (Ic) (maksimaalne) :
8A
Laos
57,663
Ühiku hind:
Võtke meiega ühendust Pakkumine
1214-110M Konkurentsivõimelised hinnad
ChipIcil on ainulaadne tarneallikas. Pakume oma klientidele 1214-110M konkurentsivõimelise hinnaga. Saate nautida meie parimat teenust, ostes ChipIc 1214-110M. Parima hinna saamiseks saidil 1214-110M võtke meiega ühendust.
Hinnapakkumise saamiseks klõpsake
1214-110M Iseärasused
1214-110M is produced by Microsemi Corporation, belongs to Transistorid – bipolaarsed (BJT) – RF.
1214-110M Toote üksikasjad
:
1214-110M – Transistorid – bipolaarsed (BJT) – RF disainitud puhvervõimendid ja toodetud Microsemi Corporation.
1214-110M, mida pakub Microsemi Corporation, saab osta CHIPMLCC-st.
Siit leiate erinevaid juhtivate tootjate elektroonilisi osi rahu.
CHIPMLCC 1214-110M on range kvaliteedikontrolliga ja nõuetele vastav kõike nõuetele.
CHIPMLCC-s näidatud fondi staatus on ainult viitamiseks.
Kui te ei leia otsitavat osa, võtke meiega ühendust lisateavet, näiteks varude arvu andmetabelis 1214-110M (PDF), hind 1214-110M, Pinout 1214-110M, manuaal 1214-110M Ja 1214-110M asenduslahendus.
1214-110M, mida pakub Microsemi Corporation, saab osta CHIPMLCC-st.
Siit leiate erinevaid juhtivate tootjate elektroonilisi osi rahu.
CHIPMLCC 1214-110M on range kvaliteedikontrolliga ja nõuetele vastav kõike nõuetele.
CHIPMLCC-s näidatud fondi staatus on ainult viitamiseks.
Kui te ei leia otsitavat osa, võtke meiega ühendust lisateavet, näiteks varude arvu andmetabelis 1214-110M (PDF), hind 1214-110M, Pinout 1214-110M, manuaal 1214-110M Ja 1214-110M asenduslahendus.
1214-110M FAQ
:
1. What is the operating temperature range for the 1214-110M discrete semiconductor?
The operating temperature range for the 1214-110M discrete semiconductor is -55°C to +150°C.
2. What is the maximum voltage rating for the 1214-110M?
The maximum voltage rating for the 1214-110M is 100V.
3. Can the 1214-110M be used in high-frequency applications?
Yes, the 1214-110M can be used in high-frequency applications due to its fast switching characteristics and low capacitance.
4. What is the typical on-state voltage drop for the 1214-110M at its rated current?
The typical on-state voltage drop for the 1214-110M at its rated current is 0.7V.
5. Does the 1214-110M require a heat sink for operation?
It is recommended to use a heat sink for the 1214-110M when operating at high currents or in elevated ambient temperatures to ensure optimal performance and reliability.
6. What is the maximum continuous forward current rating for the 1214-110M?
The maximum continuous forward current rating for the 1214-110M is 10A.
7. Is the 1214-110M suitable for use in automotive applications?
Yes, the 1214-110M is suitable for use in automotive applications, as it meets the necessary reliability and performance requirements for such environments.
8. What is the typical reverse recovery time for the 1214-110M?
The typical reverse recovery time for the 1214-110M is 35 nanoseconds.
9. Can the 1214-110M be operated in parallel for higher current applications?
Yes, the 1214-110M can be operated in parallel to achieve higher current-handling capabilities, provided that proper current sharing and thermal management are implemented.
10. What are the recommended storage conditions for the 1214-110M?
The recommended storage conditions for the 1214-110M include a dry environment with a temperature range of -55°C to +150°C to maintain its electrical and mechanical integrity.
The operating temperature range for the 1214-110M discrete semiconductor is -55°C to +150°C.
2. What is the maximum voltage rating for the 1214-110M?
The maximum voltage rating for the 1214-110M is 100V.
3. Can the 1214-110M be used in high-frequency applications?
Yes, the 1214-110M can be used in high-frequency applications due to its fast switching characteristics and low capacitance.
4. What is the typical on-state voltage drop for the 1214-110M at its rated current?
The typical on-state voltage drop for the 1214-110M at its rated current is 0.7V.
5. Does the 1214-110M require a heat sink for operation?
It is recommended to use a heat sink for the 1214-110M when operating at high currents or in elevated ambient temperatures to ensure optimal performance and reliability.
6. What is the maximum continuous forward current rating for the 1214-110M?
The maximum continuous forward current rating for the 1214-110M is 10A.
7. Is the 1214-110M suitable for use in automotive applications?
Yes, the 1214-110M is suitable for use in automotive applications, as it meets the necessary reliability and performance requirements for such environments.
8. What is the typical reverse recovery time for the 1214-110M?
The typical reverse recovery time for the 1214-110M is 35 nanoseconds.
9. Can the 1214-110M be operated in parallel for higher current applications?
Yes, the 1214-110M can be operated in parallel to achieve higher current-handling capabilities, provided that proper current sharing and thermal management are implemented.
10. What are the recommended storage conditions for the 1214-110M?
The recommended storage conditions for the 1214-110M include a dry environment with a temperature range of -55°C to +150°C to maintain its electrical and mechanical integrity.
1214-110M Seotud märksõnad
:
1214-110M Hind
1214-110M Maalimine
1214-110M Tihvtide pinge
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