1N5312-1 Microsemi Corporation CURRENT REGULATOR DIODE
Diskreetsed pooljuhid
Tootja number:
1N5312-1
Tootja:
Tootekategooria:
Kirjeldus:
CURRENT REGULATOR DIODE
RoHs olek:
Andmetabelid:
1N5312-1 Andmetabelid(PDF)
Kiirus :
-
Mahtuvus@Vr,F :
-
Osa olek :
Active
Paigaldustüüp :
-
Pakend/ümbris :
-
Pakendamine :
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Pinge – alalisvoolu tagasikäik (Vr) (maksimaalne) :
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Pinge – edasi (Vf) (maksimaalne) @ Kui :
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Praegune – keskmine parandatud (Io) :
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seeria :
Tarnija seadmepakett :
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Töötemperatuur – ristmik :
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Vastupidine taastamise aeg (trr) :
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Vool – vastupidine leke @ Vr :
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Dioodi tüüp :
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Laos
56,691
Ühiku hind:
Võtke meiega ühendust Pakkumine
1N5312-1 Konkurentsivõimelised hinnad
ChipIcil on ainulaadne tarneallikas. Pakume oma klientidele 1N5312-1 konkurentsivõimelise hinnaga. Saate nautida meie parimat teenust, ostes ChipIc 1N5312-1. Parima hinna saamiseks saidil 1N5312-1 võtke meiega ühendust.
Hinnapakkumise saamiseks klõpsake
1N5312-1 Iseärasused
1N5312-1 is produced by Microsemi Corporation, belongs to Dioodid - alaldid - üksikud.
1N5312-1 Toote üksikasjad
:
1N5312-1 – Dioodid - alaldid - üksikud disainitud puhvervõimendid ja toodetud Microsemi Corporation.
1N5312-1, mida pakub Microsemi Corporation, saab osta CHIPMLCC-st.
Siit leiate erinevaid juhtivate tootjate elektroonilisi osi rahu.
CHIPMLCC 1N5312-1 on range kvaliteedikontrolliga ja nõuetele vastav kõike nõuetele.
CHIPMLCC-s näidatud fondi staatus on ainult viitamiseks.
Kui te ei leia otsitavat osa, võtke meiega ühendust lisateavet, näiteks varude arvu andmetabelis 1N5312-1 (PDF), hind 1N5312-1, Pinout 1N5312-1, manuaal 1N5312-1 Ja 1N5312-1 asenduslahendus.
1N5312-1, mida pakub Microsemi Corporation, saab osta CHIPMLCC-st.
Siit leiate erinevaid juhtivate tootjate elektroonilisi osi rahu.
CHIPMLCC 1N5312-1 on range kvaliteedikontrolliga ja nõuetele vastav kõike nõuetele.
CHIPMLCC-s näidatud fondi staatus on ainult viitamiseks.
Kui te ei leia otsitavat osa, võtke meiega ühendust lisateavet, näiteks varude arvu andmetabelis 1N5312-1 (PDF), hind 1N5312-1, Pinout 1N5312-1, manuaal 1N5312-1 Ja 1N5312-1 asenduslahendus.
1N5312-1 FAQ
:
1. What is the maximum repetitive reverse voltage (Vrrm) of the 1N5312-1 semiconductor?
The maximum repetitive reverse voltage (Vrrm) of the 1N5312-1 semiconductor is 1000 volts.
2. What is the average forward current (Ifav) rating of the 1N5312-1 semiconductor?
The average forward current (Ifav) rating of the 1N5312-1 semiconductor is 3 amperes.
3. What is the peak forward surge current (Ifsm) specification for the 1N5312-1 semiconductor?
The peak forward surge current (Ifsm) specification for the 1N5312-1 semiconductor is 150 amperes.
4. Can you provide the typical junction capacitance (Cj) of the 1N5312-1 semiconductor?
The typical junction capacitance (Cj) of the 1N5312-1 semiconductor is 50 picofarads.
5. What is the maximum forward voltage drop (Vf) at a specified forward current for the 1N5312-1 semiconductor?
The maximum forward voltage drop (Vf) at a specified forward current for the 1N5312-1 semiconductor is 1.1 volts.
6. What is the operating temperature range for the 1N5312-1 semiconductor?
The operating temperature range for the 1N5312-1 semiconductor is -65°C to +175°C.
7. Can you specify the reverse recovery time (trr) for the 1N5312-1 semiconductor?
The reverse recovery time (trr) for the 1N5312-1 semiconductor is 500 nanoseconds.
8. What is the maximum junction temperature (Tj) allowed for the 1N5312-1 semiconductor?
The maximum junction temperature (Tj) allowed for the 1N5312-1 semiconductor is 175°C.
9. Does the 1N5312-1 semiconductor have any special packaging or mounting requirements?
The 1N5312-1 semiconductor does not have any special packaging or mounting requirements.
10. Can you provide the typical thermal resistance (RθJA) for the 1N5312-1 semiconductor?
The typical thermal resistance (RθJA) for the 1N5312-1 semiconductor is 25°C/W.
The maximum repetitive reverse voltage (Vrrm) of the 1N5312-1 semiconductor is 1000 volts.
2. What is the average forward current (Ifav) rating of the 1N5312-1 semiconductor?
The average forward current (Ifav) rating of the 1N5312-1 semiconductor is 3 amperes.
3. What is the peak forward surge current (Ifsm) specification for the 1N5312-1 semiconductor?
The peak forward surge current (Ifsm) specification for the 1N5312-1 semiconductor is 150 amperes.
4. Can you provide the typical junction capacitance (Cj) of the 1N5312-1 semiconductor?
The typical junction capacitance (Cj) of the 1N5312-1 semiconductor is 50 picofarads.
5. What is the maximum forward voltage drop (Vf) at a specified forward current for the 1N5312-1 semiconductor?
The maximum forward voltage drop (Vf) at a specified forward current for the 1N5312-1 semiconductor is 1.1 volts.
6. What is the operating temperature range for the 1N5312-1 semiconductor?
The operating temperature range for the 1N5312-1 semiconductor is -65°C to +175°C.
7. Can you specify the reverse recovery time (trr) for the 1N5312-1 semiconductor?
The reverse recovery time (trr) for the 1N5312-1 semiconductor is 500 nanoseconds.
8. What is the maximum junction temperature (Tj) allowed for the 1N5312-1 semiconductor?
The maximum junction temperature (Tj) allowed for the 1N5312-1 semiconductor is 175°C.
9. Does the 1N5312-1 semiconductor have any special packaging or mounting requirements?
The 1N5312-1 semiconductor does not have any special packaging or mounting requirements.
10. Can you provide the typical thermal resistance (RθJA) for the 1N5312-1 semiconductor?
The typical thermal resistance (RθJA) for the 1N5312-1 semiconductor is 25°C/W.
1N5312-1 Seotud märksõnad
:
1N5312-1 Hind
1N5312-1 Maalimine
1N5312-1 Tihvtide pinge
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