JAN1N1186 Microsemi Corporation DIODE GEN PURP 200V 35A DO203AB
Diskreetsed pooljuhid
Tootja number:
JAN1N1186
Tootja:
Tootekategooria:
Kirjeldus:
DIODE GEN PURP 200V 35A DO203AB
RoHs olek:
Andmetabelid:
JAN1N1186 Andmetabelid(PDF)
Kiirus :
Standard Recovery >500ns, > 200mA (Io)
Mahtuvus@Vr,F :
-
Osa olek :
Active
Paigaldustüüp :
Chassis, Stud Mount
Pakend/ümbris :
DO-203AB, DO-5, Stud
Pakendamine :
Bulk
Pinge – alalisvoolu tagasikäik (Vr) (maksimaalne) :
200V
Pinge – edasi (Vf) (maksimaalne) @ Kui :
1.4V @ 110A
Praegune – keskmine parandatud (Io) :
35A
seeria :
Military, MIL-PRF-19500/297
Tarnija seadmepakett :
DO-5
Töötemperatuur – ristmik :
-65°C ~ 175°C
Vastupidine taastamise aeg (trr) :
-
Vool – vastupidine leke @ Vr :
10µA @ 200V
Dioodi tüüp :
Standard
Laos
51,214
Ühiku hind:
Võtke meiega ühendust Pakkumine
JAN1N1186 Konkurentsivõimelised hinnad
ChipIcil on ainulaadne tarneallikas. Pakume oma klientidele JAN1N1186 konkurentsivõimelise hinnaga. Saate nautida meie parimat teenust, ostes ChipIc JAN1N1186. Parima hinna saamiseks saidil JAN1N1186 võtke meiega ühendust.
Hinnapakkumise saamiseks klõpsake
JAN1N1186 Iseärasused
JAN1N1186 is produced by Microsemi Corporation, belongs to Dioodid - alaldid - üksikud.
JAN1N1186 Toote üksikasjad
:
JAN1N1186 – Dioodid - alaldid - üksikud disainitud puhvervõimendid ja toodetud Microsemi Corporation.
JAN1N1186, mida pakub Microsemi Corporation, saab osta CHIPMLCC-st.
Siit leiate erinevaid juhtivate tootjate elektroonilisi osi rahu.
CHIPMLCC JAN1N1186 on range kvaliteedikontrolliga ja nõuetele vastav kõike nõuetele.
CHIPMLCC-s näidatud fondi staatus on ainult viitamiseks.
Kui te ei leia otsitavat osa, võtke meiega ühendust lisateavet, näiteks varude arvu andmetabelis JAN1N1186 (PDF), hind JAN1N1186, Pinout JAN1N1186, manuaal JAN1N1186 Ja JAN1N1186 asenduslahendus.
JAN1N1186, mida pakub Microsemi Corporation, saab osta CHIPMLCC-st.
Siit leiate erinevaid juhtivate tootjate elektroonilisi osi rahu.
CHIPMLCC JAN1N1186 on range kvaliteedikontrolliga ja nõuetele vastav kõike nõuetele.
CHIPMLCC-s näidatud fondi staatus on ainult viitamiseks.
Kui te ei leia otsitavat osa, võtke meiega ühendust lisateavet, näiteks varude arvu andmetabelis JAN1N1186 (PDF), hind JAN1N1186, Pinout JAN1N1186, manuaal JAN1N1186 Ja JAN1N1186 asenduslahendus.
JAN1N1186 FAQ
:
1. What is the maximum repetitive reverse voltage (VRRM) of the JAN1N1186 semiconductor?
The maximum repetitive reverse voltage (VRRM) of the JAN1N1186 semiconductor is 50 volts.
2. What is the average forward current (IF(AV)) rating for the JAN1N1186 semiconductor?
The average forward current (IF(AV)) rating for the JAN1N1186 semiconductor is 35 amperes.
3. What is the peak forward surge current (IFSM) specification for the JAN1N1186 semiconductor?
The peak forward surge current (IFSM) specification for the JAN1N1186 semiconductor is 400 amperes.
4. Can the JAN1N1186 semiconductor handle high temperature environments?
Yes, the JAN1N1186 semiconductor is designed to operate effectively in high temperature environments.
5. What is the typical junction capacitance (CJ) of the JAN1N1186 semiconductor?
The typical junction capacitance (CJ) of the JAN1N1186 semiconductor is 200 picofarads.
6. Is the JAN1N1186 semiconductor suitable for fast switching applications?
Yes, the JAN1N1186 semiconductor is suitable for fast switching applications due to its low reverse recovery time.
7. What is the maximum forward voltage drop (VF) for the JAN1N1186 semiconductor at a specified current?
The maximum forward voltage drop (VF) for the JAN1N1186 semiconductor at a specified current is 1.0 volt.
8. Does the JAN1N1186 semiconductor have a high surge capability?
Yes, the JAN1N1186 semiconductor has a high surge capability, making it suitable for demanding applications.
9. What is the operating temperature range for the JAN1N1186 semiconductor?
The operating temperature range for the JAN1N1186 semiconductor is -65°C to +175°C.
10. Is the JAN1N1186 semiconductor RoHS compliant?
Yes, the JAN1N1186 semiconductor is RoHS compliant, meeting environmental standards for hazardous substances.
The maximum repetitive reverse voltage (VRRM) of the JAN1N1186 semiconductor is 50 volts.
2. What is the average forward current (IF(AV)) rating for the JAN1N1186 semiconductor?
The average forward current (IF(AV)) rating for the JAN1N1186 semiconductor is 35 amperes.
3. What is the peak forward surge current (IFSM) specification for the JAN1N1186 semiconductor?
The peak forward surge current (IFSM) specification for the JAN1N1186 semiconductor is 400 amperes.
4. Can the JAN1N1186 semiconductor handle high temperature environments?
Yes, the JAN1N1186 semiconductor is designed to operate effectively in high temperature environments.
5. What is the typical junction capacitance (CJ) of the JAN1N1186 semiconductor?
The typical junction capacitance (CJ) of the JAN1N1186 semiconductor is 200 picofarads.
6. Is the JAN1N1186 semiconductor suitable for fast switching applications?
Yes, the JAN1N1186 semiconductor is suitable for fast switching applications due to its low reverse recovery time.
7. What is the maximum forward voltage drop (VF) for the JAN1N1186 semiconductor at a specified current?
The maximum forward voltage drop (VF) for the JAN1N1186 semiconductor at a specified current is 1.0 volt.
8. Does the JAN1N1186 semiconductor have a high surge capability?
Yes, the JAN1N1186 semiconductor has a high surge capability, making it suitable for demanding applications.
9. What is the operating temperature range for the JAN1N1186 semiconductor?
The operating temperature range for the JAN1N1186 semiconductor is -65°C to +175°C.
10. Is the JAN1N1186 semiconductor RoHS compliant?
Yes, the JAN1N1186 semiconductor is RoHS compliant, meeting environmental standards for hazardous substances.
JAN1N1186 Seotud märksõnad
:
JAN1N1186 Hind
JAN1N1186 Maalimine
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