PUMH1,115 Nexperia USA Inc. TRANS 2NPN PREBIAS 0.3W 6TSSOP
Diskreetsed pooljuhid
Tootja number:
PUMH1,115
Tootja:
Tootekategooria:
Kirjeldus:
TRANS 2NPN PREBIAS 0.3W 6TSSOP
RoHs olek:
Pliivaba / RoHS-iga ühilduv Andmetabelid:
PUMH1,115 Andmetabelid(PDF)
Alalisvoolu võimendus (hFE) (min) @ Ic, Vce :
60 @ 5mA, 5V
Osa olek :
Active
Paigaldustüüp :
Surface Mount
Pakend/ümbris :
6-TSSOP, SC-88, SOT-363
Pakendamine :
Tape & Reel (TR)
Pinge – kollektori emitteri rike (maksimaalne) :
50V
Praegune – kollektori katkestus (maksimaalne) :
100nA
Sagedus – üleminek :
230MHz
seeria :
-
Takisti – alus (R1) :
22 kOhms
Takisti – emitteri alus (R2) :
22 kOhms
Tarnija seadmepakett :
6-TSSOP
Transistori tüüp :
2 NPN - Pre-Biased (Dual)
Vce Saturation (Max) @ Ib, Ic :
150mV @ 500µA, 10mA
Võimsus – max :
300mW
Vool – koguja (Ic) (maksimaalne) :
100mA
Laos
38,564
Ühiku hind:
Võtke meiega ühendust Pakkumine
PUMH1,115 Konkurentsivõimelised hinnad
ChipIcil on ainulaadne tarneallikas. Pakume oma klientidele PUMH1,115 konkurentsivõimelise hinnaga. Saate nautida meie parimat teenust, ostes ChipIc PUMH1,115. Parima hinna saamiseks saidil PUMH1,115 võtke meiega ühendust.
Hinnapakkumise saamiseks klõpsake
PUMH1,115 Iseärasused
PUMH1,115 is produced by Nexperia USA Inc., belongs to Transistorid – bipolaarsed (BJT) – massiivid, eelpingestatud.
PUMH1,115 Toote üksikasjad
:
PUMH1,115 – Transistorid – bipolaarsed (BJT) – massiivid, eelpingestatud disainitud puhvervõimendid ja toodetud Nexperia USA Inc..
PUMH1,115, mida pakub Nexperia USA Inc., saab osta CHIPMLCC-st.
Siit leiate erinevaid juhtivate tootjate elektroonilisi osi rahu.
CHIPMLCC PUMH1,115 on range kvaliteedikontrolliga ja nõuetele vastav kõike nõuetele.
CHIPMLCC-s näidatud fondi staatus on ainult viitamiseks.
Kui te ei leia otsitavat osa, võtke meiega ühendust lisateavet, näiteks varude arvu andmetabelis PUMH1,115 (PDF), hind PUMH1,115, Pinout PUMH1,115, manuaal PUMH1,115 Ja PUMH1,115 asenduslahendus.
PUMH1,115, mida pakub Nexperia USA Inc., saab osta CHIPMLCC-st.
Siit leiate erinevaid juhtivate tootjate elektroonilisi osi rahu.
CHIPMLCC PUMH1,115 on range kvaliteedikontrolliga ja nõuetele vastav kõike nõuetele.
CHIPMLCC-s näidatud fondi staatus on ainult viitamiseks.
Kui te ei leia otsitavat osa, võtke meiega ühendust lisateavet, näiteks varude arvu andmetabelis PUMH1,115 (PDF), hind PUMH1,115, Pinout PUMH1,115, manuaal PUMH1,115 Ja PUMH1,115 asenduslahendus.
PUMH1,115 FAQ
:
1. What is the maximum collector current (Ic) for the PUMH1,115 transistor?
The maximum collector current (Ic) for the PUMH1,115 transistor is 100 mA.
2. What is the maximum power dissipation (Ptot) for the PUMH1,115 transistor?
The maximum power dissipation (Ptot) for the PUMH1,115 transistor is 225 mW.
3. What is the DC current gain (hFE) range for the PUMH1,115 transistor?
The DC current gain (hFE) range for the PUMH1,115 transistor is 120 to 400.
4. What is the maximum collector-emitter voltage (Vce) for the PUMH1,115 transistor?
The maximum collector-emitter voltage (Vce) for the PUMH1,115 transistor is 40 V.
5. What is the thermal resistance junction to ambient (RthJA) for the PUMH1,115 transistor?
The thermal resistance junction to ambient (RthJA) for the PUMH1,115 transistor is 625 °C/W.
6. What is the storage temperature range for the PUMH1,115 transistor?
The storage temperature range for the PUMH1,115 transistor is -65°C to +150°C.
7. What is the operating temperature range for the PUMH1,115 transistor?
The operating temperature range for the PUMH1,115 transistor is -55°C to +150°C.
8. What is the base-emitter voltage (VBE) for the PUMH1,115 transistor at a specified collector current?
The base-emitter voltage (VBE) for the PUMH1,115 transistor at a specified collector current is typically 0.95 V.
9. What is the transition frequency (fT) for the PUMH1,115 transistor?
The transition frequency (fT) for the PUMH1,115 transistor is 300 MHz.
10. What is the package type for the PUMH1,115 transistor?
The package type for the PUMH1,115 transistor is SOT363.
The maximum collector current (Ic) for the PUMH1,115 transistor is 100 mA.
2. What is the maximum power dissipation (Ptot) for the PUMH1,115 transistor?
The maximum power dissipation (Ptot) for the PUMH1,115 transistor is 225 mW.
3. What is the DC current gain (hFE) range for the PUMH1,115 transistor?
The DC current gain (hFE) range for the PUMH1,115 transistor is 120 to 400.
4. What is the maximum collector-emitter voltage (Vce) for the PUMH1,115 transistor?
The maximum collector-emitter voltage (Vce) for the PUMH1,115 transistor is 40 V.
5. What is the thermal resistance junction to ambient (RthJA) for the PUMH1,115 transistor?
The thermal resistance junction to ambient (RthJA) for the PUMH1,115 transistor is 625 °C/W.
6. What is the storage temperature range for the PUMH1,115 transistor?
The storage temperature range for the PUMH1,115 transistor is -65°C to +150°C.
7. What is the operating temperature range for the PUMH1,115 transistor?
The operating temperature range for the PUMH1,115 transistor is -55°C to +150°C.
8. What is the base-emitter voltage (VBE) for the PUMH1,115 transistor at a specified collector current?
The base-emitter voltage (VBE) for the PUMH1,115 transistor at a specified collector current is typically 0.95 V.
9. What is the transition frequency (fT) for the PUMH1,115 transistor?
The transition frequency (fT) for the PUMH1,115 transistor is 300 MHz.
10. What is the package type for the PUMH1,115 transistor?
The package type for the PUMH1,115 transistor is SOT363.
PUMH1,115 Seotud märksõnad
:
PUMH1,115 Hind
PUMH1,115 Maalimine
PUMH1,115 Tihvtide pinge
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