2SD1012G-SPA-AC ON Semiconductor TRANS NPN 15V 0.7A SPA
Diskreetsed pooljuhid
Tootja number:
2SD1012G-SPA-AC
Tootja:
Tootekategooria:
Kirjeldus:
TRANS NPN 15V 0.7A SPA
RoHs olek:

Andmetabelid:
Alalisvoolu võimendus (hFE) (min) @ Ic, Vce :
280 @ 50mA, 2V
Osa olek :
Obsolete
Paigaldustüüp :
Through Hole
Pakend/ümbris :
3-SIP
Pakendamine :
Tape & Reel (TR)
Pinge – kollektori emitteri rike (maksimaalne) :
15V
Praegune – kollektori katkestus (maksimaalne) :
1µA (ICBO)
Sagedus – üleminek :
250MHz
seeria :
-
Tarnija seadmepakett :
3-SPA
Töötemperatuur :
125°C (TJ)
Transistori tüüp :
NPN
Vce Saturation (Max) @ Ib, Ic :
80mV @ 10mA, 100mA
Võimsus – max :
250mW
Vool – koguja (Ic) (maksimaalne) :
700mA
Laos
58,069
Ühiku hind:
Võtke meiega ühendust Pakkumine
2SD1012G-SPA-AC Konkurentsivõimelised hinnad
ChipIcil on ainulaadne tarneallikas. Pakume oma klientidele 2SD1012G-SPA-AC konkurentsivõimelise hinnaga. Saate nautida meie parimat teenust, ostes ChipIc 2SD1012G-SPA-AC. Parima hinna saamiseks saidil 2SD1012G-SPA-AC võtke meiega ühendust.
Hinnapakkumise saamiseks klõpsake
2SD1012G-SPA-AC Iseärasused
2SD1012G-SPA-AC is produced by ON Semiconductor, belongs to Transistorid – bipolaarsed (BJT) – ühekordsed.
2SD1012G-SPA-AC Toote üksikasjad
:
2SD1012G-SPA-AC – Transistorid – bipolaarsed (BJT) – ühekordsed disainitud puhvervõimendid ja toodetud ON Semiconductor.
2SD1012G-SPA-AC, mida pakub ON Semiconductor, saab osta CHIPMLCC-st.
Siit leiate erinevaid juhtivate tootjate elektroonilisi osi rahu.
CHIPMLCC 2SD1012G-SPA-AC on range kvaliteedikontrolliga ja nõuetele vastav kõike nõuetele.
CHIPMLCC-s näidatud fondi staatus on ainult viitamiseks.
Kui te ei leia otsitavat osa, võtke meiega ühendust lisateavet, näiteks varude arvu andmetabelis 2SD1012G-SPA-AC (PDF), hind 2SD1012G-SPA-AC, Pinout 2SD1012G-SPA-AC, manuaal 2SD1012G-SPA-AC Ja 2SD1012G-SPA-AC asenduslahendus.
2SD1012G-SPA-AC, mida pakub ON Semiconductor, saab osta CHIPMLCC-st.
Siit leiate erinevaid juhtivate tootjate elektroonilisi osi rahu.
CHIPMLCC 2SD1012G-SPA-AC on range kvaliteedikontrolliga ja nõuetele vastav kõike nõuetele.
CHIPMLCC-s näidatud fondi staatus on ainult viitamiseks.
Kui te ei leia otsitavat osa, võtke meiega ühendust lisateavet, näiteks varude arvu andmetabelis 2SD1012G-SPA-AC (PDF), hind 2SD1012G-SPA-AC, Pinout 2SD1012G-SPA-AC, manuaal 2SD1012G-SPA-AC Ja 2SD1012G-SPA-AC asenduslahendus.
2SD1012G-SPA-AC FAQ
:
1. What is the maximum collector current (IC) rating for the 2SD1012G-SPA-AC transistor?
The maximum collector current (IC) rating for the 2SD1012G-SPA-AC transistor is 3 amperes.
2. What is the maximum collector power dissipation (PC) for the 2SD1012G-SPA-AC transistor?
The maximum collector power dissipation (PC) for the 2SD1012G-SPA-AC transistor is 1 watt.
3. What is the maximum collector-emitter voltage (VCEO) for the 2SD1012G-SPA-AC transistor?
The maximum collector-emitter voltage (VCEO) for the 2SD1012G-SPA-AC transistor is 50 volts.
4. What is the typical DC current gain (hFE) for the 2SD1012G-SPA-AC transistor?
The typical DC current gain (hFE) for the 2SD1012G-SPA-AC transistor is 60 to 320.
5. What is the storage temperature range for the 2SD1012G-SPA-AC transistor?
The storage temperature range for the 2SD1012G-SPA-AC transistor is -55°C to +150°C.
6. What is the thermal resistance junction to ambient (RthJA) for the 2SD1012G-SPA-AC transistor?
The thermal resistance junction to ambient (RthJA) for the 2SD1012G-SPA-AC transistor is 83°C/W.
7. What is the maximum junction temperature (Tj) for the 2SD1012G-SPA-AC transistor?
The maximum junction temperature (Tj) for the 2SD1012G-SPA-AC transistor is 150°C.
8. What is the base-emitter saturation voltage (VBE(sat)) for the 2SD1012G-SPA-AC transistor?
The base-emitter saturation voltage (VBE(sat)) for the 2SD1012G-SPA-AC transistor is 1.2 volts.
9. What is the transition frequency (fT) for the 2SD1012G-SPA-AC transistor?
The transition frequency (fT) for the 2SD1012G-SPA-AC transistor is 30 MHz.
10. What is the package type for the 2SD1012G-SPA-AC transistor?
The package type for the 2SD1012G-SPA-AC transistor is TO-126.
The maximum collector current (IC) rating for the 2SD1012G-SPA-AC transistor is 3 amperes.
2. What is the maximum collector power dissipation (PC) for the 2SD1012G-SPA-AC transistor?
The maximum collector power dissipation (PC) for the 2SD1012G-SPA-AC transistor is 1 watt.
3. What is the maximum collector-emitter voltage (VCEO) for the 2SD1012G-SPA-AC transistor?
The maximum collector-emitter voltage (VCEO) for the 2SD1012G-SPA-AC transistor is 50 volts.
4. What is the typical DC current gain (hFE) for the 2SD1012G-SPA-AC transistor?
The typical DC current gain (hFE) for the 2SD1012G-SPA-AC transistor is 60 to 320.
5. What is the storage temperature range for the 2SD1012G-SPA-AC transistor?
The storage temperature range for the 2SD1012G-SPA-AC transistor is -55°C to +150°C.
6. What is the thermal resistance junction to ambient (RthJA) for the 2SD1012G-SPA-AC transistor?
The thermal resistance junction to ambient (RthJA) for the 2SD1012G-SPA-AC transistor is 83°C/W.
7. What is the maximum junction temperature (Tj) for the 2SD1012G-SPA-AC transistor?
The maximum junction temperature (Tj) for the 2SD1012G-SPA-AC transistor is 150°C.
8. What is the base-emitter saturation voltage (VBE(sat)) for the 2SD1012G-SPA-AC transistor?
The base-emitter saturation voltage (VBE(sat)) for the 2SD1012G-SPA-AC transistor is 1.2 volts.
9. What is the transition frequency (fT) for the 2SD1012G-SPA-AC transistor?
The transition frequency (fT) for the 2SD1012G-SPA-AC transistor is 30 MHz.
10. What is the package type for the 2SD1012G-SPA-AC transistor?
The package type for the 2SD1012G-SPA-AC transistor is TO-126.
2SD1012G-SPA-AC Seotud märksõnad
:
2SD1012G-SPA-AC Hind
2SD1012G-SPA-AC Maalimine
2SD1012G-SPA-AC Tihvtide pinge
Pakkumised: Kiire hinnapakkumise kontroll
Minimaalne tellimus: 1
Sisaldab "2SD1" seeria tooteid