IMD10AMT1G ON Semiconductor TRANS NPN/PNP PREBIAS SC74R
Diskreetsed pooljuhid
Tootja number:
IMD10AMT1G
Tootja:
Tootekategooria:
Kirjeldus:
TRANS NPN/PNP PREBIAS SC74R
RoHs olek:
Pliivaba / RoHS-iga ühilduv Andmetabelid:
IMD10AMT1G Andmetabelid(PDF)
Alalisvoolu võimendus (hFE) (min) @ Ic, Vce :
100 @ 1mA, 5V / 68 @ 100mA, 5V
Osa olek :
Active
Paigaldustüüp :
Surface Mount
Pakend/ümbris :
SOT-23-6 Thin, TSOT-23-6
Pakendamine :
Tape & Reel (TR)
Pinge – kollektori emitteri rike (maksimaalne) :
50V
Praegune – kollektori katkestus (maksimaalne) :
500nA
Sagedus – üleminek :
-
seeria :
-
Takisti – alus (R1) :
13 kOhms, 130 Ohms
Takisti – emitteri alus (R2) :
10 kOhms
Tarnija seadmepakett :
SC-74R
Transistori tüüp :
1 NPN, 1 PNP - Pre-Biased (Dual)
Vce Saturation (Max) @ Ib, Ic :
300mV @ 1mA, 10mA
Võimsus – max :
285mW
Vool – koguja (Ic) (maksimaalne) :
500mA
Laos
12,492
Ühiku hind:
Võtke meiega ühendust Pakkumine
IMD10AMT1G Konkurentsivõimelised hinnad
ChipIcil on ainulaadne tarneallikas. Pakume oma klientidele IMD10AMT1G konkurentsivõimelise hinnaga. Saate nautida meie parimat teenust, ostes ChipIc IMD10AMT1G. Parima hinna saamiseks saidil IMD10AMT1G võtke meiega ühendust.
Hinnapakkumise saamiseks klõpsake
IMD10AMT1G Iseärasused
IMD10AMT1G is produced by ON Semiconductor, belongs to Transistorid – bipolaarsed (BJT) – massiivid, eelpingestatud.
IMD10AMT1G Toote üksikasjad
:
IMD10AMT1G – Transistorid – bipolaarsed (BJT) – massiivid, eelpingestatud disainitud puhvervõimendid ja toodetud ON Semiconductor.
IMD10AMT1G, mida pakub ON Semiconductor, saab osta CHIPMLCC-st.
Siit leiate erinevaid juhtivate tootjate elektroonilisi osi rahu.
CHIPMLCC IMD10AMT1G on range kvaliteedikontrolliga ja nõuetele vastav kõike nõuetele.
CHIPMLCC-s näidatud fondi staatus on ainult viitamiseks.
Kui te ei leia otsitavat osa, võtke meiega ühendust lisateavet, näiteks varude arvu andmetabelis IMD10AMT1G (PDF), hind IMD10AMT1G, Pinout IMD10AMT1G, manuaal IMD10AMT1G Ja IMD10AMT1G asenduslahendus.
IMD10AMT1G, mida pakub ON Semiconductor, saab osta CHIPMLCC-st.
Siit leiate erinevaid juhtivate tootjate elektroonilisi osi rahu.
CHIPMLCC IMD10AMT1G on range kvaliteedikontrolliga ja nõuetele vastav kõike nõuetele.
CHIPMLCC-s näidatud fondi staatus on ainult viitamiseks.
Kui te ei leia otsitavat osa, võtke meiega ühendust lisateavet, näiteks varude arvu andmetabelis IMD10AMT1G (PDF), hind IMD10AMT1G, Pinout IMD10AMT1G, manuaal IMD10AMT1G Ja IMD10AMT1G asenduslahendus.
IMD10AMT1G FAQ
:
1. What is the maximum continuous drain current for the IMD10AMT1G?
The maximum continuous drain current for the IMD10AMT1G is 3.7A.
2. What is the typical gate-source threshold voltage for this semiconductor?
The typical gate-source threshold voltage for the IMD10AMT1G is 2V.
3. Can you provide the maximum power dissipation for this device?
The maximum power dissipation for the IMD10AMT1G is 2.5W.
4. What is the on-state resistance of the IMD10AMT1G at a specified gate-source voltage?
The on-state resistance of the IMD10AMT1G at a gate-source voltage of 10V is typically 0.045 ohms.
5. What is the typical input capacitance of the IMD10AMT1G?
The typical input capacitance of the IMD10AMT1G is 1100pF.
6. Can you explain the typical turn-on delay time for this semiconductor?
The typical turn-on delay time for the IMD10AMT1G is 8.5ns.
7. What is the maximum junction temperature for this device?
The maximum junction temperature for the IMD10AMT1G is 175°C.
8. Can you provide the typical reverse recovery time for the diode in this semiconductor?
The typical reverse recovery time for the diode in the IMD10AMT1G is 35ns.
9. What is the typical thermal resistance from junction to ambient for this component?
The typical thermal resistance from junction to ambient for the IMD10AMT1G is 62°C/W.
10. Can you explain the maximum storage temperature for this semiconductor?
The maximum storage temperature for the IMD10AMT1G is -55°C to 175°C.
The maximum continuous drain current for the IMD10AMT1G is 3.7A.
2. What is the typical gate-source threshold voltage for this semiconductor?
The typical gate-source threshold voltage for the IMD10AMT1G is 2V.
3. Can you provide the maximum power dissipation for this device?
The maximum power dissipation for the IMD10AMT1G is 2.5W.
4. What is the on-state resistance of the IMD10AMT1G at a specified gate-source voltage?
The on-state resistance of the IMD10AMT1G at a gate-source voltage of 10V is typically 0.045 ohms.
5. What is the typical input capacitance of the IMD10AMT1G?
The typical input capacitance of the IMD10AMT1G is 1100pF.
6. Can you explain the typical turn-on delay time for this semiconductor?
The typical turn-on delay time for the IMD10AMT1G is 8.5ns.
7. What is the maximum junction temperature for this device?
The maximum junction temperature for the IMD10AMT1G is 175°C.
8. Can you provide the typical reverse recovery time for the diode in this semiconductor?
The typical reverse recovery time for the diode in the IMD10AMT1G is 35ns.
9. What is the typical thermal resistance from junction to ambient for this component?
The typical thermal resistance from junction to ambient for the IMD10AMT1G is 62°C/W.
10. Can you explain the maximum storage temperature for this semiconductor?
The maximum storage temperature for the IMD10AMT1G is -55°C to 175°C.
IMD10AMT1G Seotud märksõnad
:
IMD10AMT1G Hind
IMD10AMT1G Maalimine
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