KSD227GBU ON Semiconductor TRANS NPN 25V 0.3A TO-92
Diskreetsed pooljuhid
Tootja number:
KSD227GBU
Tootja:
Tootekategooria:
Kirjeldus:
TRANS NPN 25V 0.3A TO-92
RoHs olek:
Pliivaba / RoHS-iga ühilduv Andmetabelid:
KSD227GBU Andmetabelid(PDF)
Alalisvoolu võimendus (hFE) (min) @ Ic, Vce :
200 @ 50mA, 1V
Osa olek :
Obsolete
Paigaldustüüp :
Through Hole
Pakend/ümbris :
TO-226-3, TO-92-3 (TO-226AA)
Pakendamine :
Bulk
Pinge – kollektori emitteri rike (maksimaalne) :
25V
Praegune – kollektori katkestus (maksimaalne) :
100nA (ICBO)
Sagedus – üleminek :
-
seeria :
-
Tarnija seadmepakett :
TO-92-3
Töötemperatuur :
150°C (TJ)
Transistori tüüp :
NPN
Vce Saturation (Max) @ Ib, Ic :
400mV @ 30mA, 300mA
Võimsus – max :
400mW
Vool – koguja (Ic) (maksimaalne) :
300mA
Laos
35,547
Ühiku hind:
Võtke meiega ühendust Pakkumine
KSD227GBU Konkurentsivõimelised hinnad
ChipIcil on ainulaadne tarneallikas. Pakume oma klientidele KSD227GBU konkurentsivõimelise hinnaga. Saate nautida meie parimat teenust, ostes ChipIc KSD227GBU. Parima hinna saamiseks saidil KSD227GBU võtke meiega ühendust.
Hinnapakkumise saamiseks klõpsake
KSD227GBU Iseärasused
KSD227GBU is produced by ON Semiconductor, belongs to Transistorid – bipolaarsed (BJT) – ühekordsed.
KSD227GBU Toote üksikasjad
:
KSD227GBU – Transistorid – bipolaarsed (BJT) – ühekordsed disainitud puhvervõimendid ja toodetud ON Semiconductor.
KSD227GBU, mida pakub ON Semiconductor, saab osta CHIPMLCC-st.
Siit leiate erinevaid juhtivate tootjate elektroonilisi osi rahu.
CHIPMLCC KSD227GBU on range kvaliteedikontrolliga ja nõuetele vastav kõike nõuetele.
CHIPMLCC-s näidatud fondi staatus on ainult viitamiseks.
Kui te ei leia otsitavat osa, võtke meiega ühendust lisateavet, näiteks varude arvu andmetabelis KSD227GBU (PDF), hind KSD227GBU, Pinout KSD227GBU, manuaal KSD227GBU Ja KSD227GBU asenduslahendus.
KSD227GBU, mida pakub ON Semiconductor, saab osta CHIPMLCC-st.
Siit leiate erinevaid juhtivate tootjate elektroonilisi osi rahu.
CHIPMLCC KSD227GBU on range kvaliteedikontrolliga ja nõuetele vastav kõike nõuetele.
CHIPMLCC-s näidatud fondi staatus on ainult viitamiseks.
Kui te ei leia otsitavat osa, võtke meiega ühendust lisateavet, näiteks varude arvu andmetabelis KSD227GBU (PDF), hind KSD227GBU, Pinout KSD227GBU, manuaal KSD227GBU Ja KSD227GBU asenduslahendus.
KSD227GBU FAQ
:
1. What is the maximum collector current of the KSD227GBU transistor?
The maximum collector current of the KSD227GBU transistor is 3A.
2. What is the maximum collector-emitter voltage rating of the KSD227GBU transistor?
The maximum collector-emitter voltage rating of the KSD227GBU transistor is 400V.
3. What is the power dissipation of the KSD227GBU transistor?
The power dissipation of the KSD227GBU transistor is 25W.
4. What is the gain bandwidth product of the KSD227GBU transistor?
The gain bandwidth product of the KSD227GBU transistor is 30MHz.
5. What is the maximum junction temperature of the KSD227GBU transistor?
The maximum junction temperature of the KSD227GBU transistor is 150°C.
6. What is the typical base-emitter saturation voltage of the KSD227GBU transistor?
The typical base-emitter saturation voltage of the KSD227GBU transistor is 1.2V.
7. What is the thermal resistance junction to case of the KSD227GBU transistor?
The thermal resistance junction to case of the KSD227GBU transistor is 3.125°C/W.
8. What is the storage temperature range of the KSD227GBU transistor?
The storage temperature range of the KSD227GBU transistor is -55°C to 150°C.
9. What is the transition frequency of the KSD227GBU transistor?
The transition frequency of the KSD227GBU transistor is 30MHz.
10. What is the maximum allowable power dissipation at 25°C ambient temperature for the KSD227GBU transistor?
The maximum allowable power dissipation at 25°C ambient temperature for the KSD227GBU transistor is 25W.
The maximum collector current of the KSD227GBU transistor is 3A.
2. What is the maximum collector-emitter voltage rating of the KSD227GBU transistor?
The maximum collector-emitter voltage rating of the KSD227GBU transistor is 400V.
3. What is the power dissipation of the KSD227GBU transistor?
The power dissipation of the KSD227GBU transistor is 25W.
4. What is the gain bandwidth product of the KSD227GBU transistor?
The gain bandwidth product of the KSD227GBU transistor is 30MHz.
5. What is the maximum junction temperature of the KSD227GBU transistor?
The maximum junction temperature of the KSD227GBU transistor is 150°C.
6. What is the typical base-emitter saturation voltage of the KSD227GBU transistor?
The typical base-emitter saturation voltage of the KSD227GBU transistor is 1.2V.
7. What is the thermal resistance junction to case of the KSD227GBU transistor?
The thermal resistance junction to case of the KSD227GBU transistor is 3.125°C/W.
8. What is the storage temperature range of the KSD227GBU transistor?
The storage temperature range of the KSD227GBU transistor is -55°C to 150°C.
9. What is the transition frequency of the KSD227GBU transistor?
The transition frequency of the KSD227GBU transistor is 30MHz.
10. What is the maximum allowable power dissipation at 25°C ambient temperature for the KSD227GBU transistor?
The maximum allowable power dissipation at 25°C ambient temperature for the KSD227GBU transistor is 25W.
KSD227GBU Seotud märksõnad
:
KSD227GBU Hind
KSD227GBU Maalimine
KSD227GBU Tihvtide pinge
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