SBC856BDW1T1G ON Semiconductor TRANS 2PNP 65V 0.1A SOT-363
Diskreetsed pooljuhid
Tootja number:
SBC856BDW1T1G
Tootja:
Tootekategooria:
Kirjeldus:
TRANS 2PNP 65V 0.1A SOT-363
RoHs olek:
Pliivaba / RoHS-iga ühilduv Andmetabelid:
SBC856BDW1T1G Andmetabelid(PDF)
Alalisvoolu võimendus (hFE) (min) @ Ic, Vce :
220 @ 2mA, 5V
Osa olek :
Active
Paigaldustüüp :
Surface Mount
Pakend/ümbris :
6-TSSOP, SC-88, SOT-363
Pakendamine :
Tape & Reel (TR)
Pinge – kollektori emitteri rike (maksimaalne) :
65V
Praegune – kollektori katkestus (maksimaalne) :
15nA (ICBO)
Sagedus – üleminek :
100MHz
seeria :
Automotive, AEC-Q101
Tarnija seadmepakett :
SC-88/SC70-6/SOT-363
Töötemperatuur :
-55°C ~ 150°C (TJ)
Transistori tüüp :
2 PNP (Dual)
Vce Saturation (Max) @ Ib, Ic :
650mV @ 5mA, 100mA
Võimsus – max :
380mW
Vool – koguja (Ic) (maksimaalne) :
100mA
Laos
32,773
Ühiku hind:
Võtke meiega ühendust Pakkumine
SBC856BDW1T1G Konkurentsivõimelised hinnad
ChipIcil on ainulaadne tarneallikas. Pakume oma klientidele SBC856BDW1T1G konkurentsivõimelise hinnaga. Saate nautida meie parimat teenust, ostes ChipIc SBC856BDW1T1G. Parima hinna saamiseks saidil SBC856BDW1T1G võtke meiega ühendust.
Hinnapakkumise saamiseks klõpsake
SBC856BDW1T1G Iseärasused
SBC856BDW1T1G is produced by ON Semiconductor, belongs to Transistorid – bipolaarsed (BJT) – massiivid.
SBC856BDW1T1G Toote üksikasjad
:
SBC856BDW1T1G – Transistorid – bipolaarsed (BJT) – massiivid disainitud puhvervõimendid ja toodetud ON Semiconductor.
SBC856BDW1T1G, mida pakub ON Semiconductor, saab osta CHIPMLCC-st.
Siit leiate erinevaid juhtivate tootjate elektroonilisi osi rahu.
CHIPMLCC SBC856BDW1T1G on range kvaliteedikontrolliga ja nõuetele vastav kõike nõuetele.
CHIPMLCC-s näidatud fondi staatus on ainult viitamiseks.
Kui te ei leia otsitavat osa, võtke meiega ühendust lisateavet, näiteks varude arvu andmetabelis SBC856BDW1T1G (PDF), hind SBC856BDW1T1G, Pinout SBC856BDW1T1G, manuaal SBC856BDW1T1G Ja SBC856BDW1T1G asenduslahendus.
SBC856BDW1T1G, mida pakub ON Semiconductor, saab osta CHIPMLCC-st.
Siit leiate erinevaid juhtivate tootjate elektroonilisi osi rahu.
CHIPMLCC SBC856BDW1T1G on range kvaliteedikontrolliga ja nõuetele vastav kõike nõuetele.
CHIPMLCC-s näidatud fondi staatus on ainult viitamiseks.
Kui te ei leia otsitavat osa, võtke meiega ühendust lisateavet, näiteks varude arvu andmetabelis SBC856BDW1T1G (PDF), hind SBC856BDW1T1G, Pinout SBC856BDW1T1G, manuaal SBC856BDW1T1G Ja SBC856BDW1T1G asenduslahendus.
SBC856BDW1T1G FAQ
:
1. What is the maximum operating temperature of the SBC856BDW1T1G semiconductor?
The maximum operating temperature of the SBC856BDW1T1G semiconductor is 150°C.
2. What is the typical input capacitance of the SBC856BDW1T1G?
The typical input capacitance of the SBC856BDW1T1G is 4 pF.
3. What is the maximum collector current of the SBC856BDW1T1G?
The maximum collector current of the SBC856BDW1T1G is 100 mA.
4. What is the maximum power dissipation of the SBC856BDW1T1G?
The maximum power dissipation of the SBC856BDW1T1G is 250 mW.
5. What is the transition frequency of the SBC856BDW1T1G?
The transition frequency of the SBC856BDW1T1G is 150 MHz.
6. What is the maximum voltage across the collector and emitter of the SBC856BDW1T1G?
The maximum voltage across the collector and emitter of the SBC856BDW1T1G is 80 V.
7. What is the gain bandwidth product of the SBC856BDW1T1G?
The gain bandwidth product of the SBC856BDW1T1G is 200 MHz.
8. What is the maximum base-emitter voltage of the SBC856BDW1T1G?
The maximum base-emitter voltage of the SBC856BDW1T1G is 5 V.
9. What is the noise figure of the SBC856BDW1T1G?
The noise figure of the SBC856BDW1T1G is 3 dB.
10. What is the storage temperature range of the SBC856BDW1T1G?
The storage temperature range of the SBC856BDW1T1G is -55°C to 150°C.
The maximum operating temperature of the SBC856BDW1T1G semiconductor is 150°C.
2. What is the typical input capacitance of the SBC856BDW1T1G?
The typical input capacitance of the SBC856BDW1T1G is 4 pF.
3. What is the maximum collector current of the SBC856BDW1T1G?
The maximum collector current of the SBC856BDW1T1G is 100 mA.
4. What is the maximum power dissipation of the SBC856BDW1T1G?
The maximum power dissipation of the SBC856BDW1T1G is 250 mW.
5. What is the transition frequency of the SBC856BDW1T1G?
The transition frequency of the SBC856BDW1T1G is 150 MHz.
6. What is the maximum voltage across the collector and emitter of the SBC856BDW1T1G?
The maximum voltage across the collector and emitter of the SBC856BDW1T1G is 80 V.
7. What is the gain bandwidth product of the SBC856BDW1T1G?
The gain bandwidth product of the SBC856BDW1T1G is 200 MHz.
8. What is the maximum base-emitter voltage of the SBC856BDW1T1G?
The maximum base-emitter voltage of the SBC856BDW1T1G is 5 V.
9. What is the noise figure of the SBC856BDW1T1G?
The noise figure of the SBC856BDW1T1G is 3 dB.
10. What is the storage temperature range of the SBC856BDW1T1G?
The storage temperature range of the SBC856BDW1T1G is -55°C to 150°C.
SBC856BDW1T1G Seotud märksõnad
:
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