BS2100F-E2 Rohm Semiconductor IC DVR IGBT/MOSFET
Integraallülitused (IC-d)
Tootja number:
BS2100F-E2
Tootja:
Tootekategooria:
Kirjeldus:
IC DVR IGBT/MOSFET
RoHs olek:
Pliivaba / RoHS-iga ühilduv Andmetabelid:
BS2100F-E2 Andmetabelid(PDF)
juhitud konfiguratsioon :
Half-Bridge
Juhtide arv :
2
Kanali tüüp :
Independent
Kõrge külgpinge – max (bootstrap) :
600V
Loogikapinge - VIL, VIH :
1V, 2.6V
Osa olek :
Not For New Designs
Paigaldustüüp :
Surface Mount
Pakend/ümbris :
8-SOIC (0.173", 4.40mm Width)
Pakendamine :
Tape & Reel (TR)
Pinge – toide :
10 V ~ 18 V
Praegune – tippväljund (allikas, valamu) :
60mA, 130mA
seeria :
-
Sisendtüüp :
Non-Inverting
Tarnija seadmepakett :
8-SOP
Töötemperatuur :
-40°C ~ 150°C (TJ)
Tõusu/languse aeg (tüüp) :
200ns, 100ns
Värava tüüp :
N-Channel MOSFET
Laos
15,831
Ühiku hind:
Võtke meiega ühendust Pakkumine
BS2100F-E2 Konkurentsivõimelised hinnad
ChipIcil on ainulaadne tarneallikas. Pakume oma klientidele BS2100F-E2 konkurentsivõimelise hinnaga. Saate nautida meie parimat teenust, ostes ChipIc BS2100F-E2. Parima hinna saamiseks saidil BS2100F-E2 võtke meiega ühendust.
Hinnapakkumise saamiseks klõpsake
BS2100F-E2 Iseärasused
BS2100F-E2 is produced by Rohm Semiconductor, belongs to PMIC – värava draiverid.
BS2100F-E2 Toote üksikasjad
:
BS2100F-E2 – PMIC – värava draiverid disainitud puhvervõimendid ja toodetud Rohm Semiconductor.
BS2100F-E2, mida pakub Rohm Semiconductor, saab osta CHIPMLCC-st.
Siit leiate erinevaid juhtivate tootjate elektroonilisi osi rahu.
CHIPMLCC BS2100F-E2 on range kvaliteedikontrolliga ja nõuetele vastav kõike nõuetele.
CHIPMLCC-s näidatud fondi staatus on ainult viitamiseks.
Kui te ei leia otsitavat osa, võtke meiega ühendust lisateavet, näiteks varude arvu andmetabelis BS2100F-E2 (PDF), hind BS2100F-E2, Pinout BS2100F-E2, manuaal BS2100F-E2 Ja BS2100F-E2 asenduslahendus.
BS2100F-E2, mida pakub Rohm Semiconductor, saab osta CHIPMLCC-st.
Siit leiate erinevaid juhtivate tootjate elektroonilisi osi rahu.
CHIPMLCC BS2100F-E2 on range kvaliteedikontrolliga ja nõuetele vastav kõike nõuetele.
CHIPMLCC-s näidatud fondi staatus on ainult viitamiseks.
Kui te ei leia otsitavat osa, võtke meiega ühendust lisateavet, näiteks varude arvu andmetabelis BS2100F-E2 (PDF), hind BS2100F-E2, Pinout BS2100F-E2, manuaal BS2100F-E2 Ja BS2100F-E2 asenduslahendus.
BS2100F-E2 FAQ
:
1. What is the maximum operating temperature for the BS2100F-E2 semiconductor?
The maximum operating temperature for the BS2100F-E2 semiconductor is 150°C.
2. What is the typical forward voltage drop for the BS2100F-E2 at a current of 10A?
The typical forward voltage drop for the BS2100F-E2 at a current of 10A is 1.2V.
3. Can the BS2100F-E2 handle reverse voltages? If so, what is the maximum reverse voltage it can withstand?
Yes, the BS2100F-E2 can handle reverse voltages. The maximum reverse voltage it can withstand is 100V.
4. What is the recommended storage temperature range for the BS2100F-E2 semiconductor?
The recommended storage temperature range for the BS2100F-E2 semiconductor is -55°C to 150°C.
5. Does the BS2100F-E2 have any built-in protection features against overcurrent or overvoltage?
Yes, the BS2100F-E2 has built-in protection features against overcurrent and overvoltage.
6. What is the typical on-state current for the BS2100F-E2 at a forward voltage of 1.2V?
The typical on-state current for the BS2100F-E2 at a forward voltage of 1.2V is 100A.
7. Is the BS2100F-E2 suitable for high-frequency applications?
Yes, the BS2100F-E2 is suitable for high-frequency applications.
8. What is the maximum junction temperature for the BS2100F-E2 semiconductor?
The maximum junction temperature for the BS2100F-E2 semiconductor is 175°C.
9. Can the BS2100F-E2 be used in parallel configurations for higher current applications?
Yes, the BS2100F-E2 can be used in parallel configurations for higher current applications.
10. What is the typical reverse recovery time for the BS2100F-E2 at a di/dt of 100A/μs?
The typical reverse recovery time for the BS2100F-E2 at a di/dt of 100A/μs is 50ns.
The maximum operating temperature for the BS2100F-E2 semiconductor is 150°C.
2. What is the typical forward voltage drop for the BS2100F-E2 at a current of 10A?
The typical forward voltage drop for the BS2100F-E2 at a current of 10A is 1.2V.
3. Can the BS2100F-E2 handle reverse voltages? If so, what is the maximum reverse voltage it can withstand?
Yes, the BS2100F-E2 can handle reverse voltages. The maximum reverse voltage it can withstand is 100V.
4. What is the recommended storage temperature range for the BS2100F-E2 semiconductor?
The recommended storage temperature range for the BS2100F-E2 semiconductor is -55°C to 150°C.
5. Does the BS2100F-E2 have any built-in protection features against overcurrent or overvoltage?
Yes, the BS2100F-E2 has built-in protection features against overcurrent and overvoltage.
6. What is the typical on-state current for the BS2100F-E2 at a forward voltage of 1.2V?
The typical on-state current for the BS2100F-E2 at a forward voltage of 1.2V is 100A.
7. Is the BS2100F-E2 suitable for high-frequency applications?
Yes, the BS2100F-E2 is suitable for high-frequency applications.
8. What is the maximum junction temperature for the BS2100F-E2 semiconductor?
The maximum junction temperature for the BS2100F-E2 semiconductor is 175°C.
9. Can the BS2100F-E2 be used in parallel configurations for higher current applications?
Yes, the BS2100F-E2 can be used in parallel configurations for higher current applications.
10. What is the typical reverse recovery time for the BS2100F-E2 at a di/dt of 100A/μs?
The typical reverse recovery time for the BS2100F-E2 at a di/dt of 100A/μs is 50ns.
BS2100F-E2 Seotud märksõnad
:
BS2100F-E2 Hind
BS2100F-E2 Maalimine
BS2100F-E2 Tihvtide pinge
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Minimaalne tellimus: 1
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