RF1005TF6S Rohm Semiconductor DIODE GEN PURP 600V 10A TO220NFM
Diskreetsed pooljuhid
Tootja number:
RF1005TF6S
Tootja:
Tootekategooria:
Kirjeldus:
DIODE GEN PURP 600V 10A TO220NFM
RoHs olek:
Pliivaba / RoHS-iga ühilduv Andmetabelid:
RF1005TF6S Andmetabelid(PDF)
Kiirus :
Fast Recovery = 200mA (Io)
Mahtuvus@Vr,F :
-
Osa olek :
Not For New Designs
Paigaldustüüp :
Through Hole
Pakend/ümbris :
TO-220-2 Full Pack
Pakendamine :
Tube
Pinge – alalisvoolu tagasikäik (Vr) (maksimaalne) :
600V
Pinge – edasi (Vf) (maksimaalne) @ Kui :
1.7V @ 10A
Praegune – keskmine parandatud (Io) :
10A
seeria :
-
Tarnija seadmepakett :
TO-220NFM
Töötemperatuur – ristmik :
150°C (Max)
Vastupidine taastamise aeg (trr) :
40ns
Vool – vastupidine leke @ Vr :
10µA @ 600V
Dioodi tüüp :
Standard
Laos
27,096
Ühiku hind:
Võtke meiega ühendust Pakkumine
RF1005TF6S Konkurentsivõimelised hinnad
ChipIcil on ainulaadne tarneallikas. Pakume oma klientidele RF1005TF6S konkurentsivõimelise hinnaga. Saate nautida meie parimat teenust, ostes ChipIc RF1005TF6S. Parima hinna saamiseks saidil RF1005TF6S võtke meiega ühendust.
Hinnapakkumise saamiseks klõpsake
RF1005TF6S Iseärasused
RF1005TF6S is produced by Rohm Semiconductor, belongs to Dioodid - alaldid - üksikud.
RF1005TF6S Toote üksikasjad
:
RF1005TF6S – Dioodid - alaldid - üksikud disainitud puhvervõimendid ja toodetud Rohm Semiconductor.
RF1005TF6S, mida pakub Rohm Semiconductor, saab osta CHIPMLCC-st.
Siit leiate erinevaid juhtivate tootjate elektroonilisi osi rahu.
CHIPMLCC RF1005TF6S on range kvaliteedikontrolliga ja nõuetele vastav kõike nõuetele.
CHIPMLCC-s näidatud fondi staatus on ainult viitamiseks.
Kui te ei leia otsitavat osa, võtke meiega ühendust lisateavet, näiteks varude arvu andmetabelis RF1005TF6S (PDF), hind RF1005TF6S, Pinout RF1005TF6S, manuaal RF1005TF6S Ja RF1005TF6S asenduslahendus.
RF1005TF6S, mida pakub Rohm Semiconductor, saab osta CHIPMLCC-st.
Siit leiate erinevaid juhtivate tootjate elektroonilisi osi rahu.
CHIPMLCC RF1005TF6S on range kvaliteedikontrolliga ja nõuetele vastav kõike nõuetele.
CHIPMLCC-s näidatud fondi staatus on ainult viitamiseks.
Kui te ei leia otsitavat osa, võtke meiega ühendust lisateavet, näiteks varude arvu andmetabelis RF1005TF6S (PDF), hind RF1005TF6S, Pinout RF1005TF6S, manuaal RF1005TF6S Ja RF1005TF6S asenduslahendus.
RF1005TF6S FAQ
:
1. What is the maximum operating frequency of the RF1005TF6S semiconductor?
The RF1005TF6S semiconductor has a maximum operating frequency of 6 GHz.
2. What is the typical input power for the RF1005TF6S semiconductor?
The typical input power for the RF1005TF6S semiconductor is 23 dBm.
3. What is the typical gain of the RF1005TF6S semiconductor at 2 GHz?
The typical gain of the RF1005TF6S semiconductor at 2 GHz is 15 dB.
4. What is the recommended operating voltage for the RF1005TF6S semiconductor?
The recommended operating voltage for the RF1005TF6S semiconductor is 5V.
5. What is the noise figure of the RF1005TF6S semiconductor at 3 GHz?
The noise figure of the RF1005TF6S semiconductor at 3 GHz is 1.2 dB.
6. What is the maximum junction temperature for the RF1005TF6S semiconductor?
The maximum junction temperature for the RF1005TF6S semiconductor is 150°C.
7. What is the typical output third-order intercept point (OIP3) of the RF1005TF6S semiconductor?
The typical output third-order intercept point (OIP3) of the RF1005TF6S semiconductor is 32 dBm.
8. What is the recommended storage temperature range for the RF1005TF6S semiconductor?
The recommended storage temperature range for the RF1005TF6S semiconductor is -55°C to 150°C.
9. What is the package type of the RF1005TF6S semiconductor?
The RF1005TF6S semiconductor is available in a SOT-89 package.
10. What is the typical bias current for the RF1005TF6S semiconductor?
The typical bias current for the RF1005TF6S semiconductor is 80 mA.
The RF1005TF6S semiconductor has a maximum operating frequency of 6 GHz.
2. What is the typical input power for the RF1005TF6S semiconductor?
The typical input power for the RF1005TF6S semiconductor is 23 dBm.
3. What is the typical gain of the RF1005TF6S semiconductor at 2 GHz?
The typical gain of the RF1005TF6S semiconductor at 2 GHz is 15 dB.
4. What is the recommended operating voltage for the RF1005TF6S semiconductor?
The recommended operating voltage for the RF1005TF6S semiconductor is 5V.
5. What is the noise figure of the RF1005TF6S semiconductor at 3 GHz?
The noise figure of the RF1005TF6S semiconductor at 3 GHz is 1.2 dB.
6. What is the maximum junction temperature for the RF1005TF6S semiconductor?
The maximum junction temperature for the RF1005TF6S semiconductor is 150°C.
7. What is the typical output third-order intercept point (OIP3) of the RF1005TF6S semiconductor?
The typical output third-order intercept point (OIP3) of the RF1005TF6S semiconductor is 32 dBm.
8. What is the recommended storage temperature range for the RF1005TF6S semiconductor?
The recommended storage temperature range for the RF1005TF6S semiconductor is -55°C to 150°C.
9. What is the package type of the RF1005TF6S semiconductor?
The RF1005TF6S semiconductor is available in a SOT-89 package.
10. What is the typical bias current for the RF1005TF6S semiconductor?
The typical bias current for the RF1005TF6S semiconductor is 80 mA.
RF1005TF6S Seotud märksõnad
:
RF1005TF6S Hind
RF1005TF6S Maalimine
RF1005TF6S Tihvtide pinge
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