STH310N10F7-6 STMicroelectronics MOSFET N-CH 100V 180A H2PAK-2
Diskreetsed pooljuhid
Tootja number:
STH310N10F7-6
Tootja:
Tootekategooria:
Kirjeldus:
MOSFET N-CH 100V 180A H2PAK-2
RoHs olek:
Pliivaba / RoHS-iga ühilduv Andmetabelid:
STH310N10F7-6 Andmetabelid(PDF)
Ajami pinge (maksimaalne Rds sees, minimaalne Rds sees) :
10V
Äravoolu allika pinge (Vdss) :
100V
FET tüüp :
N-Channel
FET-funktsioon :
-
Osa olek :
Active
Paigaldustüüp :
Surface Mount
Pakend/ümbris :
TO-263-7, D²Pak (6 Leads + Tab)
Pakendamine :
Tape & Reel (TR)
Rds sees (maksimaalne) @ Id, Vgs :
2.5 mOhm @ 60A, 10V
seeria :
DeepGATE™, STripFET™ VII
Sisendmahtuvus (Ciss) (maksimaalne) @ Vds :
12800pF @ 25V
Tarnija seadmepakett :
H2PAK-6
Tehnoloogia :
MOSFET (Metal Oxide)
Töötemperatuur :
-55°C ~ 175°C (TJ)
Värava laadimine (Qg) (maksimaalne) @ Vgs :
180nC @ 10V
Vgs (maksimaalne) :
±20V
Vgs(th) (Max) @ Id :
3.8V @ 250µA
Võimsuse hajumine (maksimaalne) :
315W (Tc)
Vooluvool – pidev äravool (Id) @ 25°C :
180A (Tc)
Laos
54,038
Ühiku hind:
Võtke meiega ühendust Pakkumine
STH310N10F7-6 Konkurentsivõimelised hinnad
ChipIcil on ainulaadne tarneallikas. Pakume oma klientidele STH310N10F7-6 konkurentsivõimelise hinnaga. Saate nautida meie parimat teenust, ostes ChipIc STH310N10F7-6. Parima hinna saamiseks saidil STH310N10F7-6 võtke meiega ühendust.
Hinnapakkumise saamiseks klõpsake
STH310N10F7-6 Iseärasused
STH310N10F7-6 is produced by STMicroelectronics, belongs to Transistorid - väljatransistorid, MOSFETid - üksikud.
STH310N10F7-6 Toote üksikasjad
:
STH310N10F7-6 – Transistorid - väljatransistorid, MOSFETid - üksikud disainitud puhvervõimendid ja toodetud STMicroelectronics.
STH310N10F7-6, mida pakub STMicroelectronics, saab osta CHIPMLCC-st.
Siit leiate erinevaid juhtivate tootjate elektroonilisi osi rahu.
CHIPMLCC STH310N10F7-6 on range kvaliteedikontrolliga ja nõuetele vastav kõike nõuetele.
CHIPMLCC-s näidatud fondi staatus on ainult viitamiseks.
Kui te ei leia otsitavat osa, võtke meiega ühendust lisateavet, näiteks varude arvu andmetabelis STH310N10F7-6 (PDF), hind STH310N10F7-6, Pinout STH310N10F7-6, manuaal STH310N10F7-6 Ja STH310N10F7-6 asenduslahendus.
STH310N10F7-6, mida pakub STMicroelectronics, saab osta CHIPMLCC-st.
Siit leiate erinevaid juhtivate tootjate elektroonilisi osi rahu.
CHIPMLCC STH310N10F7-6 on range kvaliteedikontrolliga ja nõuetele vastav kõike nõuetele.
CHIPMLCC-s näidatud fondi staatus on ainult viitamiseks.
Kui te ei leia otsitavat osa, võtke meiega ühendust lisateavet, näiteks varude arvu andmetabelis STH310N10F7-6 (PDF), hind STH310N10F7-6, Pinout STH310N10F7-6, manuaal STH310N10F7-6 Ja STH310N10F7-6 asenduslahendus.
STH310N10F7-6 FAQ
:
1. What is the maximum drain-source voltage (VDS) of the STH310N10F7-6 power MOSFET?
The maximum drain-source voltage (VDS) of the STH310N10F7-6 power MOSFET is 100V.
2. What is the continuous drain current (ID) rating of the STH310N10F7-6 power MOSFET?
The continuous drain current (ID) rating of the STH310N10F7-6 power MOSFET is 110A.
3. What is the on-state resistance (RDS(on)) of the STH310N10F7-6 power MOSFET at 10V gate-source voltage?
The on-state resistance (RDS(on)) of the STH310N10F7-6 power MOSFET at 10V gate-source voltage is 0.007 ohms.
4. Can the STH310N10F7-6 power MOSFET be used in automotive applications?
Yes, the STH310N10F7-6 power MOSFET is suitable for automotive applications.
5. What is the maximum junction temperature (Tj) of the STH310N10F7-6 power MOSFET?
The maximum junction temperature (Tj) of the STH310N10F7-6 power MOSFET is 175°C.
6. Does the STH310N10F7-6 power MOSFET have a low input capacitance for high-speed switching applications?
Yes, the STH310N10F7-6 power MOSFET features low input capacitance for high-speed switching applications.
7. What is the gate threshold voltage (VGS(th)) of the STH310N10F7-6 power MOSFET?
The gate threshold voltage (VGS(th)) of the STH310N10F7-6 power MOSFET is typically 2.5V.
8. Is the STH310N10F7-6 power MOSFET RoHS compliant?
Yes, the STH310N10F7-6 power MOSFET is RoHS compliant.
9. What is the total power dissipation (PD) of the STH310N10F7-6 power MOSFET?
The total power dissipation (PD) of the STH310N10F7-6 power MOSFET is 300W.
10. Does the STH310N10F7-6 power MOSFET have built-in ESD protection?
Yes, the STH310N10F7-6 power MOSFET is designed with built-in ESD protection.
The maximum drain-source voltage (VDS) of the STH310N10F7-6 power MOSFET is 100V.
2. What is the continuous drain current (ID) rating of the STH310N10F7-6 power MOSFET?
The continuous drain current (ID) rating of the STH310N10F7-6 power MOSFET is 110A.
3. What is the on-state resistance (RDS(on)) of the STH310N10F7-6 power MOSFET at 10V gate-source voltage?
The on-state resistance (RDS(on)) of the STH310N10F7-6 power MOSFET at 10V gate-source voltage is 0.007 ohms.
4. Can the STH310N10F7-6 power MOSFET be used in automotive applications?
Yes, the STH310N10F7-6 power MOSFET is suitable for automotive applications.
5. What is the maximum junction temperature (Tj) of the STH310N10F7-6 power MOSFET?
The maximum junction temperature (Tj) of the STH310N10F7-6 power MOSFET is 175°C.
6. Does the STH310N10F7-6 power MOSFET have a low input capacitance for high-speed switching applications?
Yes, the STH310N10F7-6 power MOSFET features low input capacitance for high-speed switching applications.
7. What is the gate threshold voltage (VGS(th)) of the STH310N10F7-6 power MOSFET?
The gate threshold voltage (VGS(th)) of the STH310N10F7-6 power MOSFET is typically 2.5V.
8. Is the STH310N10F7-6 power MOSFET RoHS compliant?
Yes, the STH310N10F7-6 power MOSFET is RoHS compliant.
9. What is the total power dissipation (PD) of the STH310N10F7-6 power MOSFET?
The total power dissipation (PD) of the STH310N10F7-6 power MOSFET is 300W.
10. Does the STH310N10F7-6 power MOSFET have built-in ESD protection?
Yes, the STH310N10F7-6 power MOSFET is designed with built-in ESD protection.
STH310N10F7-6 Seotud märksõnad
:
STH310N10F7-6 Hind
STH310N10F7-6 Maalimine
STH310N10F7-6 Tihvtide pinge
Pakkumised: Kiire hinnapakkumise kontroll
Minimaalne tellimus: 1
Sisaldab "STH3" seeria tooteid
