2SC5200N(S1,E,S) Toshiba Semiconductor and Storage TRANS NPN 230V 15A TO-3PL
Diskreetsed pooljuhid
Tootja number:
2SC5200N(S1,E,S)
Tootekategooria:
Kirjeldus:
TRANS NPN 230V 15A TO-3PL
RoHs olek:
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Andmetabelid:
Alalisvoolu võimendus (hFE) (min) @ Ic, Vce :
80 @ 1A, 5V
Osa olek :
Active
Paigaldustüüp :
Through Hole
Pakend/ümbris :
TO-3P-3, SC-65-3
Pakendamine :
Tube
Pinge – kollektori emitteri rike (maksimaalne) :
230V
Praegune – kollektori katkestus (maksimaalne) :
5µA (ICBO)
Sagedus – üleminek :
30MHz
seeria :
-
Tarnija seadmepakett :
TO-3P(N)
Töötemperatuur :
150°C (TJ)
Transistori tüüp :
NPN
Vce Saturation (Max) @ Ib, Ic :
3V @ 800mA, 8A
Võimsus – max :
150W
Vool – koguja (Ic) (maksimaalne) :
15A
Laos
30,612
Ühiku hind:
Võtke meiega ühendust Pakkumine
2SC5200N(S1,E,S) Konkurentsivõimelised hinnad
ChipIcil on ainulaadne tarneallikas. Pakume oma klientidele 2SC5200N(S1,E,S) konkurentsivõimelise hinnaga. Saate nautida meie parimat teenust, ostes ChipIc 2SC5200N(S1,E,S). Parima hinna saamiseks saidil 2SC5200N(S1,E,S) võtke meiega ühendust.
Hinnapakkumise saamiseks klõpsake
2SC5200N(S1,E,S) Iseärasused
2SC5200N(S1,E,S) is produced by Toshiba Semiconductor and Storage, belongs to Transistorid – bipolaarsed (BJT) – ühekordsed.
2SC5200N(S1,E,S) Toote üksikasjad
:
2SC5200N(S1,E,S) – Transistorid – bipolaarsed (BJT) – ühekordsed disainitud puhvervõimendid ja toodetud Toshiba Semiconductor and Storage.
2SC5200N(S1,E,S), mida pakub Toshiba Semiconductor and Storage, saab osta CHIPMLCC-st.
Siit leiate erinevaid juhtivate tootjate elektroonilisi osi rahu.
CHIPMLCC 2SC5200N(S1,E,S) on range kvaliteedikontrolliga ja nõuetele vastav kõike nõuetele.
CHIPMLCC-s näidatud fondi staatus on ainult viitamiseks.
Kui te ei leia otsitavat osa, võtke meiega ühendust lisateavet, näiteks varude arvu andmetabelis 2SC5200N(S1,E,S) (PDF), hind 2SC5200N(S1,E,S), Pinout 2SC5200N(S1,E,S), manuaal 2SC5200N(S1,E,S) Ja 2SC5200N(S1,E,S) asenduslahendus.
2SC5200N(S1,E,S), mida pakub Toshiba Semiconductor and Storage, saab osta CHIPMLCC-st.
Siit leiate erinevaid juhtivate tootjate elektroonilisi osi rahu.
CHIPMLCC 2SC5200N(S1,E,S) on range kvaliteedikontrolliga ja nõuetele vastav kõike nõuetele.
CHIPMLCC-s näidatud fondi staatus on ainult viitamiseks.
Kui te ei leia otsitavat osa, võtke meiega ühendust lisateavet, näiteks varude arvu andmetabelis 2SC5200N(S1,E,S) (PDF), hind 2SC5200N(S1,E,S), Pinout 2SC5200N(S1,E,S), manuaal 2SC5200N(S1,E,S) Ja 2SC5200N(S1,E,S) asenduslahendus.
2SC5200N(S1,E,S) FAQ
:
1. What is the maximum collector current (IC) rating for the 2SC5200N(S1,E,S)?
The maximum collector current (IC) rating for the 2SC5200N(S1,E,S) is 15A.
2. What is the maximum collector power dissipation (PC) for the 2SC5200N(S1,E,S)?
The maximum collector power dissipation (PC) for the 2SC5200N(S1,E,S) is 150W.
3. What is the maximum collector-emitter voltage (VCEO) for the 2SC5200N(S1,E,S)?
The maximum collector-emitter voltage (VCEO) for the 2SC5200N(S1,E,S) is 230V.
4. What is the typical DC current gain (hFE) for the 2SC5200N(S1,E,S)?
The typical DC current gain (hFE) for the 2SC5200N(S1,E,S) is 55.
5. What is the thermal resistance junction to case (RthJC) for the 2SC5200N(S1,E,S)?
The thermal resistance junction to case (RthJC) for the 2SC5200N(S1,E,S) is 1.25°C/W.
6. What is the storage temperature range for the 2SC5200N(S1,E,S)?
The storage temperature range for the 2SC5200N(S1,E,S) is -55°C to 150°C.
7. What is the transition frequency (fT) for the 2SC5200N(S1,E,S)?
The transition frequency (fT) for the 2SC5200N(S1,E,S) is 30MHz.
8. What is the maximum base-emitter voltage (VBE) for the 2SC5200N(S1,E,S)?
The maximum base-emitter voltage (VBE) for the 2SC5200N(S1,E,S) is 5V.
9. What is the recommended operating collector current (IC) for the 2SC5200N(S1,E,S)?
The recommended operating collector current (IC) for the 2SC5200N(S1,E,S) is 8A.
10. What is the package type for the 2SC5200N(S1,E,S)?
The package type for the 2SC5200N(S1,E,S) is TO-3P.
The maximum collector current (IC) rating for the 2SC5200N(S1,E,S) is 15A.
2. What is the maximum collector power dissipation (PC) for the 2SC5200N(S1,E,S)?
The maximum collector power dissipation (PC) for the 2SC5200N(S1,E,S) is 150W.
3. What is the maximum collector-emitter voltage (VCEO) for the 2SC5200N(S1,E,S)?
The maximum collector-emitter voltage (VCEO) for the 2SC5200N(S1,E,S) is 230V.
4. What is the typical DC current gain (hFE) for the 2SC5200N(S1,E,S)?
The typical DC current gain (hFE) for the 2SC5200N(S1,E,S) is 55.
5. What is the thermal resistance junction to case (RthJC) for the 2SC5200N(S1,E,S)?
The thermal resistance junction to case (RthJC) for the 2SC5200N(S1,E,S) is 1.25°C/W.
6. What is the storage temperature range for the 2SC5200N(S1,E,S)?
The storage temperature range for the 2SC5200N(S1,E,S) is -55°C to 150°C.
7. What is the transition frequency (fT) for the 2SC5200N(S1,E,S)?
The transition frequency (fT) for the 2SC5200N(S1,E,S) is 30MHz.
8. What is the maximum base-emitter voltage (VBE) for the 2SC5200N(S1,E,S)?
The maximum base-emitter voltage (VBE) for the 2SC5200N(S1,E,S) is 5V.
9. What is the recommended operating collector current (IC) for the 2SC5200N(S1,E,S)?
The recommended operating collector current (IC) for the 2SC5200N(S1,E,S) is 8A.
10. What is the package type for the 2SC5200N(S1,E,S)?
The package type for the 2SC5200N(S1,E,S) is TO-3P.
2SC5200N(S1,E,S) Seotud märksõnad
:
2SC5200N(S1,E,S) Hind
2SC5200N(S1,E,S) Maalimine
2SC5200N(S1,E,S) Tihvtide pinge
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