MT3S111P(TE12L,F) Toshiba Semiconductor and Storage RF SIGE HETEROJUNCTION BIPOLAR N
Diskreetsed pooljuhid
Tootja number:
MT3S111P(TE12L,F)
Tootekategooria:
Kirjeldus:
RF SIGE HETEROJUNCTION BIPOLAR N
RoHs olek:
Pliivaba / RoHS-iga ühilduv Andmetabelid:
MT3S111P(TE12L,F) Andmetabelid(PDF)
Alalisvoolu võimendus (hFE) (min) @ Ic, Vce :
200 @ 30mA, 5V
Kasu :
10.5dB
Müra näitaja (dB tüüp @ f) :
1.25dB @ 1GHz
Osa olek :
Active
Paigaldustüüp :
Surface Mount
Pakend/ümbris :
TO-243AA
Pakendamine :
Tape & Reel (TR)
Pinge – kollektori emitteri rike (maksimaalne) :
6V
Sagedus – üleminek :
8GHz
seeria :
-
Tarnija seadmepakett :
PW-MINI
Töötemperatuur :
150°C (TJ)
Transistori tüüp :
NPN
Võimsus – max :
1W
Vool – koguja (Ic) (maksimaalne) :
100mA
Laos
30,826
Ühiku hind:
Võtke meiega ühendust Pakkumine
MT3S111P(TE12L,F) Konkurentsivõimelised hinnad
ChipIcil on ainulaadne tarneallikas. Pakume oma klientidele MT3S111P(TE12L,F) konkurentsivõimelise hinnaga. Saate nautida meie parimat teenust, ostes ChipIc MT3S111P(TE12L,F). Parima hinna saamiseks saidil MT3S111P(TE12L,F) võtke meiega ühendust.
Hinnapakkumise saamiseks klõpsake
MT3S111P(TE12L,F) Iseärasused
MT3S111P(TE12L,F) is produced by Toshiba Semiconductor and Storage, belongs to Transistorid – bipolaarsed (BJT) – RF.
MT3S111P(TE12L,F) Toote üksikasjad
:
MT3S111P(TE12L,F) – Transistorid – bipolaarsed (BJT) – RF disainitud puhvervõimendid ja toodetud Toshiba Semiconductor and Storage.
MT3S111P(TE12L,F), mida pakub Toshiba Semiconductor and Storage, saab osta CHIPMLCC-st.
Siit leiate erinevaid juhtivate tootjate elektroonilisi osi rahu.
CHIPMLCC MT3S111P(TE12L,F) on range kvaliteedikontrolliga ja nõuetele vastav kõike nõuetele.
CHIPMLCC-s näidatud fondi staatus on ainult viitamiseks.
Kui te ei leia otsitavat osa, võtke meiega ühendust lisateavet, näiteks varude arvu andmetabelis MT3S111P(TE12L,F) (PDF), hind MT3S111P(TE12L,F), Pinout MT3S111P(TE12L,F), manuaal MT3S111P(TE12L,F) Ja MT3S111P(TE12L,F) asenduslahendus.
MT3S111P(TE12L,F), mida pakub Toshiba Semiconductor and Storage, saab osta CHIPMLCC-st.
Siit leiate erinevaid juhtivate tootjate elektroonilisi osi rahu.
CHIPMLCC MT3S111P(TE12L,F) on range kvaliteedikontrolliga ja nõuetele vastav kõike nõuetele.
CHIPMLCC-s näidatud fondi staatus on ainult viitamiseks.
Kui te ei leia otsitavat osa, võtke meiega ühendust lisateavet, näiteks varude arvu andmetabelis MT3S111P(TE12L,F) (PDF), hind MT3S111P(TE12L,F), Pinout MT3S111P(TE12L,F), manuaal MT3S111P(TE12L,F) Ja MT3S111P(TE12L,F) asenduslahendus.
MT3S111P(TE12L,F) FAQ
:
1. What is the maximum drain-source voltage for the MT3S111P(TE12L,F) MOSFET?
The maximum drain-source voltage for the MT3S111P(TE12L,F) MOSFET is 100V.
2. What is the continuous drain current rating of the MT3S111P(TE12L,F) MOSFET?
The continuous drain current rating of the MT3S111P(TE12L,F) MOSFET is 3.7A.
3. What is the on-resistance (RDS(on)) of the MT3S111P(TE12L,F) MOSFET?
The on-resistance (RDS(on)) of the MT3S111P(TE12L,F) MOSFET is typically 60mΩ.
4. What is the gate threshold voltage of the MT3S111P(TE12L,F) MOSFET?
The gate threshold voltage of the MT3S111P(TE12L,F) MOSFET is typically 1.5V.
5. What is the total gate charge (Qg) of the MT3S111P(TE12L,F) MOSFET?
The total gate charge (Qg) of the MT3S111P(TE12L,F) MOSFET is typically 8.6nC.
6. What is the input capacitance (Ciss) of the MT3S111P(TE12L,F) MOSFET?
The input capacitance (Ciss) of the MT3S111P(TE12L,F) MOSFET is typically 1100pF.
7. What is the output capacitance (Coss) of the MT3S111P(TE12L,F) MOSFET?
The output capacitance (Coss) of the MT3S111P(TE12L,F) MOSFET is typically 200pF.
8. What is the reverse transfer capacitance (Crss) of the MT3S111P(TE12L,F) MOSFET?
The reverse transfer capacitance (Crss) of the MT3S111P(TE12L,F) MOSFET is typically 150pF.
9. What is the junction temperature range for the MT3S111P(TE12L,F) MOSFET?
The junction temperature range for the MT3S111P(TE12L,F) MOSFET is -55°C to 150°C.
10. What is the package type and lead finish of the MT3S111P(TE12L,F) MOSFET?
The MT3S111P(TE12L,F) MOSFET comes in a DPAK (TO-252) package with lead-free plating.
The maximum drain-source voltage for the MT3S111P(TE12L,F) MOSFET is 100V.
2. What is the continuous drain current rating of the MT3S111P(TE12L,F) MOSFET?
The continuous drain current rating of the MT3S111P(TE12L,F) MOSFET is 3.7A.
3. What is the on-resistance (RDS(on)) of the MT3S111P(TE12L,F) MOSFET?
The on-resistance (RDS(on)) of the MT3S111P(TE12L,F) MOSFET is typically 60mΩ.
4. What is the gate threshold voltage of the MT3S111P(TE12L,F) MOSFET?
The gate threshold voltage of the MT3S111P(TE12L,F) MOSFET is typically 1.5V.
5. What is the total gate charge (Qg) of the MT3S111P(TE12L,F) MOSFET?
The total gate charge (Qg) of the MT3S111P(TE12L,F) MOSFET is typically 8.6nC.
6. What is the input capacitance (Ciss) of the MT3S111P(TE12L,F) MOSFET?
The input capacitance (Ciss) of the MT3S111P(TE12L,F) MOSFET is typically 1100pF.
7. What is the output capacitance (Coss) of the MT3S111P(TE12L,F) MOSFET?
The output capacitance (Coss) of the MT3S111P(TE12L,F) MOSFET is typically 200pF.
8. What is the reverse transfer capacitance (Crss) of the MT3S111P(TE12L,F) MOSFET?
The reverse transfer capacitance (Crss) of the MT3S111P(TE12L,F) MOSFET is typically 150pF.
9. What is the junction temperature range for the MT3S111P(TE12L,F) MOSFET?
The junction temperature range for the MT3S111P(TE12L,F) MOSFET is -55°C to 150°C.
10. What is the package type and lead finish of the MT3S111P(TE12L,F) MOSFET?
The MT3S111P(TE12L,F) MOSFET comes in a DPAK (TO-252) package with lead-free plating.
MT3S111P(TE12L,F) Seotud märksõnad
:
MT3S111P(TE12L,F) Hind
MT3S111P(TE12L,F) Maalimine
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