203DNQ100 Vishay Semiconductor Diodes Division DIODE MODULE 100V 200A TO244AB
Diskreetsed pooljuhid
Tootja number:
203DNQ100
Tootekategooria:
Kirjeldus:
DIODE MODULE 100V 200A TO244AB
RoHs olek:
Pliivaba / RoHS-iga ühilduv Andmetabelid:
203DNQ100 Andmetabelid(PDF)
Dioodi konfiguratsioon :
1 Pair Series Connection
Kiirus :
Fast Recovery = 200mA (Io)
Osa olek :
Obsolete
Paigaldustüüp :
Chassis Mount
Pakend/ümbris :
TO-244AB
Pakendamine :
Bulk
Pinge – alalisvoolu tagasikäik (Vr) (maksimaalne) :
100V
Pinge – edasi (Vf) (maksimaalne) @ Kui :
860mV @ 100A
seeria :
-
Tarnija seadmepakett :
TO-244AB
Töötemperatuur – ristmik :
-55°C ~ 175°C
Vastupidine taastamise aeg (trr) :
-
Vool – keskmine alaldatud (Io) (dioodi kohta) :
200A
Vool – vastupidine leke @ Vr :
3mA @ 80V
Dioodi tüüp :
Schottky
Laos
34,356
Ühiku hind:
Võtke meiega ühendust Pakkumine
203DNQ100 Konkurentsivõimelised hinnad
ChipIcil on ainulaadne tarneallikas. Pakume oma klientidele 203DNQ100 konkurentsivõimelise hinnaga. Saate nautida meie parimat teenust, ostes ChipIc 203DNQ100. Parima hinna saamiseks saidil 203DNQ100 võtke meiega ühendust.
Hinnapakkumise saamiseks klõpsake
203DNQ100 Iseärasused
203DNQ100 is produced by Vishay Semiconductor Diodes Division, belongs to Dioodid - alaldid - massiivid.
203DNQ100 Toote üksikasjad
:
203DNQ100 – Dioodid - alaldid - massiivid disainitud puhvervõimendid ja toodetud Vishay Semiconductor Diodes Division.
203DNQ100, mida pakub Vishay Semiconductor Diodes Division, saab osta CHIPMLCC-st.
Siit leiate erinevaid juhtivate tootjate elektroonilisi osi rahu.
CHIPMLCC 203DNQ100 on range kvaliteedikontrolliga ja nõuetele vastav kõike nõuetele.
CHIPMLCC-s näidatud fondi staatus on ainult viitamiseks.
Kui te ei leia otsitavat osa, võtke meiega ühendust lisateavet, näiteks varude arvu andmetabelis 203DNQ100 (PDF), hind 203DNQ100, Pinout 203DNQ100, manuaal 203DNQ100 Ja 203DNQ100 asenduslahendus.
203DNQ100, mida pakub Vishay Semiconductor Diodes Division, saab osta CHIPMLCC-st.
Siit leiate erinevaid juhtivate tootjate elektroonilisi osi rahu.
CHIPMLCC 203DNQ100 on range kvaliteedikontrolliga ja nõuetele vastav kõike nõuetele.
CHIPMLCC-s näidatud fondi staatus on ainult viitamiseks.
Kui te ei leia otsitavat osa, võtke meiega ühendust lisateavet, näiteks varude arvu andmetabelis 203DNQ100 (PDF), hind 203DNQ100, Pinout 203DNQ100, manuaal 203DNQ100 Ja 203DNQ100 asenduslahendus.
203DNQ100 FAQ
:
1. What is the maximum continuous forward current for the 203DNQ100 semiconductor?
The maximum continuous forward current for the 203DNQ100 semiconductor is 200A.
2. What is the reverse recovery time of the 203DNQ100 diode?
The reverse recovery time of the 203DNQ100 diode is typically 35ns.
3. Can the 203DNQ100 handle high temperature environments?
Yes, the 203DNQ100 is designed to operate reliably in high temperature environments, with a maximum junction temperature of 150°C.
4. What is the typical forward voltage drop of the 203DNQ100 diode at its rated current?
The typical forward voltage drop of the 203DNQ100 diode at its rated current is 1.1V.
5. Is the 203DNQ100 suitable for fast switching applications?
Yes, the 203DNQ100 is suitable for fast switching applications due to its low reverse recovery time and high di/dt capability.
6. What is the maximum junction-to-case thermal resistance of the 203DNQ100?
The maximum junction-to-case thermal resistance of the 203DNQ100 is 0.5°C/W.
7. Does the 203DNQ100 have built-in ESD protection?
Yes, the 203DNQ100 has built-in ESD protection to ensure reliability in electrostatic discharge-sensitive applications.
8. What is the maximum allowable surge current for the 203DNQ100 diode?
The maximum allowable surge current for the 203DNQ100 diode is 400A.
9. Can the 203DNQ100 be used in parallel to increase current handling capability?
Yes, the 203DNQ100 can be used in parallel to increase current handling capability in high-power applications.
10. What is the storage temperature range for the 203DNQ100 semiconductor?
The storage temperature range for the 203DNQ100 semiconductor is -55°C to 175°C.
The maximum continuous forward current for the 203DNQ100 semiconductor is 200A.
2. What is the reverse recovery time of the 203DNQ100 diode?
The reverse recovery time of the 203DNQ100 diode is typically 35ns.
3. Can the 203DNQ100 handle high temperature environments?
Yes, the 203DNQ100 is designed to operate reliably in high temperature environments, with a maximum junction temperature of 150°C.
4. What is the typical forward voltage drop of the 203DNQ100 diode at its rated current?
The typical forward voltage drop of the 203DNQ100 diode at its rated current is 1.1V.
5. Is the 203DNQ100 suitable for fast switching applications?
Yes, the 203DNQ100 is suitable for fast switching applications due to its low reverse recovery time and high di/dt capability.
6. What is the maximum junction-to-case thermal resistance of the 203DNQ100?
The maximum junction-to-case thermal resistance of the 203DNQ100 is 0.5°C/W.
7. Does the 203DNQ100 have built-in ESD protection?
Yes, the 203DNQ100 has built-in ESD protection to ensure reliability in electrostatic discharge-sensitive applications.
8. What is the maximum allowable surge current for the 203DNQ100 diode?
The maximum allowable surge current for the 203DNQ100 diode is 400A.
9. Can the 203DNQ100 be used in parallel to increase current handling capability?
Yes, the 203DNQ100 can be used in parallel to increase current handling capability in high-power applications.
10. What is the storage temperature range for the 203DNQ100 semiconductor?
The storage temperature range for the 203DNQ100 semiconductor is -55°C to 175°C.
203DNQ100 Seotud märksõnad
:
203DNQ100 Hind
203DNQ100 Maalimine
203DNQ100 Tihvtide pinge
Pakkumised: Kiire hinnapakkumise kontroll
Minimaalne tellimus: 1
Sisaldab "203D" seeria tooteid