SE50PABHM3/I Vishay Semiconductor Diodes Division DIODE GEN PURP 100V 5A DO221BC
Diskreetsed pooljuhid
Tootja number:
SE50PABHM3/I
Tootekategooria:
Kirjeldus:
DIODE GEN PURP 100V 5A DO221BC
RoHs olek:
Pliivaba / RoHS-iga ühilduv Andmetabelid:
Kiirus :
Standard Recovery >500ns, > 200mA (Io)
Mahtuvus@Vr,F :
32pF @ 4V, 1MHz
Osa olek :
Active
Paigaldustüüp :
Surface Mount
Pakend/ümbris :
DO-221BC, SMA Flat Leads Exposed Pad
Pakendamine :
Tape & Reel (TR)
Pinge – alalisvoolu tagasikäik (Vr) (maksimaalne) :
100V
Pinge – edasi (Vf) (maksimaalne) @ Kui :
1.16V @ 5A
Praegune – keskmine parandatud (Io) :
5A
seeria :
eSMP®
Tarnija seadmepakett :
DO-221BC (SMPA)
Töötemperatuur – ristmik :
-55°C ~ 175°C
Vastupidine taastamise aeg (trr) :
2µs
Vool – vastupidine leke @ Vr :
10µA @ 100V
Dioodi tüüp :
Standard
Laos
16,995
Ühiku hind:
Võtke meiega ühendust Pakkumine
SE50PABHM3/I Konkurentsivõimelised hinnad
ChipIcil on ainulaadne tarneallikas. Pakume oma klientidele SE50PABHM3/I konkurentsivõimelise hinnaga. Saate nautida meie parimat teenust, ostes ChipIc SE50PABHM3/I. Parima hinna saamiseks saidil SE50PABHM3/I võtke meiega ühendust.
Hinnapakkumise saamiseks klõpsake
SE50PABHM3/I Iseärasused
SE50PABHM3/I is produced by Vishay Semiconductor Diodes Division, belongs to Dioodid - alaldid - üksikud.
SE50PABHM3/I Toote üksikasjad
:
SE50PABHM3/I – Dioodid - alaldid - üksikud disainitud puhvervõimendid ja toodetud Vishay Semiconductor Diodes Division.
SE50PABHM3/I, mida pakub Vishay Semiconductor Diodes Division, saab osta CHIPMLCC-st.
Siit leiate erinevaid juhtivate tootjate elektroonilisi osi rahu.
CHIPMLCC SE50PABHM3/I on range kvaliteedikontrolliga ja nõuetele vastav kõike nõuetele.
CHIPMLCC-s näidatud fondi staatus on ainult viitamiseks.
Kui te ei leia otsitavat osa, võtke meiega ühendust lisateavet, näiteks varude arvu andmetabelis SE50PABHM3/I (PDF), hind SE50PABHM3/I, Pinout SE50PABHM3/I, manuaal SE50PABHM3/I Ja SE50PABHM3/I asenduslahendus.
SE50PABHM3/I, mida pakub Vishay Semiconductor Diodes Division, saab osta CHIPMLCC-st.
Siit leiate erinevaid juhtivate tootjate elektroonilisi osi rahu.
CHIPMLCC SE50PABHM3/I on range kvaliteedikontrolliga ja nõuetele vastav kõike nõuetele.
CHIPMLCC-s näidatud fondi staatus on ainult viitamiseks.
Kui te ei leia otsitavat osa, võtke meiega ühendust lisateavet, näiteks varude arvu andmetabelis SE50PABHM3/I (PDF), hind SE50PABHM3/I, Pinout SE50PABHM3/I, manuaal SE50PABHM3/I Ja SE50PABHM3/I asenduslahendus.
SE50PABHM3/I FAQ
:
1. What is the maximum drain-source voltage for the SE50PABHM3/I?
The maximum drain-source voltage for the SE50PABHM3/I is 500 volts.
2. What is the continuous drain current rating for the SE50PABHM3/I?
The continuous drain current rating for the SE50PABHM3/I is 50 amperes.
3. What is the typical on-resistance for the SE50PABHM3/I at a specified gate-source voltage?
The typical on-resistance for the SE50PABHM3/I at a gate-source voltage of 10 volts is 0.03 ohms.
4. Can the SE50PABHM3/I handle high-temperature environments?
Yes, the SE50PABHM3/I is designed to operate effectively in high-temperature environments, with a maximum junction temperature of 175°C.
5. What is the typical input capacitance for the SE50PABHM3/I?
The typical input capacitance for the SE50PABHM3/I is 5200 picofarads.
6. Does the SE50PABHM3/I require an external freewheeling diode for inductive loads?
No, the SE50PABHM3/I has an integrated freewheeling diode and does not require an external one for inductive loads.
7. What is the maximum junction-to-case thermal resistance for the SE50PABHM3/I?
The maximum junction-to-case thermal resistance for the SE50PABHM3/I is 0.5°C/W.
8. Is the SE50PABHM3/I RoHS compliant?
Yes, the SE50PABHM3/I is RoHS compliant, meeting the requirements for lead-free and environmentally friendly manufacturing.
9. What is the typical gate charge for the SE50PABHM3/I at a specified gate-source voltage?
The typical gate charge for the SE50PABHM3/I at a gate-source voltage of 10 volts is 110 nanocoulombs.
10. What is the storage temperature range for the SE50PABHM3/I?
The storage temperature range for the SE50PABHM3/I is -55°C to 175°C.
The maximum drain-source voltage for the SE50PABHM3/I is 500 volts.
2. What is the continuous drain current rating for the SE50PABHM3/I?
The continuous drain current rating for the SE50PABHM3/I is 50 amperes.
3. What is the typical on-resistance for the SE50PABHM3/I at a specified gate-source voltage?
The typical on-resistance for the SE50PABHM3/I at a gate-source voltage of 10 volts is 0.03 ohms.
4. Can the SE50PABHM3/I handle high-temperature environments?
Yes, the SE50PABHM3/I is designed to operate effectively in high-temperature environments, with a maximum junction temperature of 175°C.
5. What is the typical input capacitance for the SE50PABHM3/I?
The typical input capacitance for the SE50PABHM3/I is 5200 picofarads.
6. Does the SE50PABHM3/I require an external freewheeling diode for inductive loads?
No, the SE50PABHM3/I has an integrated freewheeling diode and does not require an external one for inductive loads.
7. What is the maximum junction-to-case thermal resistance for the SE50PABHM3/I?
The maximum junction-to-case thermal resistance for the SE50PABHM3/I is 0.5°C/W.
8. Is the SE50PABHM3/I RoHS compliant?
Yes, the SE50PABHM3/I is RoHS compliant, meeting the requirements for lead-free and environmentally friendly manufacturing.
9. What is the typical gate charge for the SE50PABHM3/I at a specified gate-source voltage?
The typical gate charge for the SE50PABHM3/I at a gate-source voltage of 10 volts is 110 nanocoulombs.
10. What is the storage temperature range for the SE50PABHM3/I?
The storage temperature range for the SE50PABHM3/I is -55°C to 175°C.
SE50PABHM3/I Seotud märksõnad
:
SE50PABHM3/I Hind
SE50PABHM3/I Maalimine
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