SQ2351ES-T1_GE3 Vishay Siliconix MOSFET P-CHAN 20V SOT23
Diskreetsed pooljuhid
Tootja number:
SQ2351ES-T1_GE3
Tootja:
Tootekategooria:
Kirjeldus:
MOSFET P-CHAN 20V SOT23
RoHs olek:
Pliivaba / RoHS-iga ühilduv Andmetabelid:
SQ2351ES-T1_GE3 Andmetabelid(PDF)
Ajami pinge (maksimaalne Rds sees, minimaalne Rds sees) :
2.5V, 4.5V
Äravoolu allika pinge (Vdss) :
20V
FET tüüp :
P-Channel
FET-funktsioon :
-
Osa olek :
Active
Paigaldustüüp :
Surface Mount
Pakend/ümbris :
TO-236-3, SC-59, SOT-23-3
Pakendamine :
Tape & Reel (TR)
Rds sees (maksimaalne) @ Id, Vgs :
115 mOhm @ 2.4A, 4.5V
seeria :
Automotive, AEC-Q101, TrenchFET®
Sisendmahtuvus (Ciss) (maksimaalne) @ Vds :
330pF @ 10V
Tarnija seadmepakett :
SOT-23-3 (TO-236)
Tehnoloogia :
MOSFET (Metal Oxide)
Töötemperatuur :
-55°C ~ 175°C (TJ)
Värava laadimine (Qg) (maksimaalne) @ Vgs :
5.5nC @ 4.5V
Vgs (maksimaalne) :
±12V
Vgs(th) (Max) @ Id :
1.5V @ 250µA
Võimsuse hajumine (maksimaalne) :
2W (Tc)
Vooluvool – pidev äravool (Id) @ 25°C :
3.2A (Tc)
Laos
51,126
Ühiku hind:
Võtke meiega ühendust Pakkumine
SQ2351ES-T1_GE3 Konkurentsivõimelised hinnad
ChipIcil on ainulaadne tarneallikas. Pakume oma klientidele SQ2351ES-T1_GE3 konkurentsivõimelise hinnaga. Saate nautida meie parimat teenust, ostes ChipIc SQ2351ES-T1_GE3. Parima hinna saamiseks saidil SQ2351ES-T1_GE3 võtke meiega ühendust.
Hinnapakkumise saamiseks klõpsake
SQ2351ES-T1_GE3 Iseärasused
SQ2351ES-T1_GE3 is produced by Vishay Siliconix, belongs to Transistorid - väljatransistorid, MOSFETid - üksikud.
SQ2351ES-T1_GE3 Toote üksikasjad
:
SQ2351ES-T1_GE3 – Transistorid - väljatransistorid, MOSFETid - üksikud disainitud puhvervõimendid ja toodetud Vishay Siliconix.
SQ2351ES-T1_GE3, mida pakub Vishay Siliconix, saab osta CHIPMLCC-st.
Siit leiate erinevaid juhtivate tootjate elektroonilisi osi rahu.
CHIPMLCC SQ2351ES-T1_GE3 on range kvaliteedikontrolliga ja nõuetele vastav kõike nõuetele.
CHIPMLCC-s näidatud fondi staatus on ainult viitamiseks.
Kui te ei leia otsitavat osa, võtke meiega ühendust lisateavet, näiteks varude arvu andmetabelis SQ2351ES-T1_GE3 (PDF), hind SQ2351ES-T1_GE3, Pinout SQ2351ES-T1_GE3, manuaal SQ2351ES-T1_GE3 Ja SQ2351ES-T1_GE3 asenduslahendus.
SQ2351ES-T1_GE3, mida pakub Vishay Siliconix, saab osta CHIPMLCC-st.
Siit leiate erinevaid juhtivate tootjate elektroonilisi osi rahu.
CHIPMLCC SQ2351ES-T1_GE3 on range kvaliteedikontrolliga ja nõuetele vastav kõike nõuetele.
CHIPMLCC-s näidatud fondi staatus on ainult viitamiseks.
Kui te ei leia otsitavat osa, võtke meiega ühendust lisateavet, näiteks varude arvu andmetabelis SQ2351ES-T1_GE3 (PDF), hind SQ2351ES-T1_GE3, Pinout SQ2351ES-T1_GE3, manuaal SQ2351ES-T1_GE3 Ja SQ2351ES-T1_GE3 asenduslahendus.
SQ2351ES-T1_GE3 FAQ
:
1. What is the maximum drain-source voltage for SQ2351ES-T1_GE3?
The maximum drain-source voltage for SQ2351ES-T1_GE3 is 20V.
2. What is the typical on-resistance for SQ2351ES-T1_GE3?
The typical on-resistance for SQ2351ES-T1_GE3 is 45mΩ.
3. What is the maximum continuous drain current for SQ2351ES-T1_GE3?
The maximum continuous drain current for SQ2351ES-T1_GE3 is 100A.
4. What is the gate threshold voltage for SQ2351ES-T1_GE3?
The gate threshold voltage for SQ2351ES-T1_GE3 is typically 2.5V.
5. What is the maximum junction temperature for SQ2351ES-T1_GE3?
The maximum junction temperature for SQ2351ES-T1_GE3 is 175°C.
6. What is the input capacitance for SQ2351ES-T1_GE3?
The input capacitance for SQ2351ES-T1_GE3 is typically 6800pF.
7. What is the total gate charge for SQ2351ES-T1_GE3?
The total gate charge for SQ2351ES-T1_GE3 is typically 40nC.
8. What is the maximum power dissipation for SQ2351ES-T1_GE3?
The maximum power dissipation for SQ2351ES-T1_GE3 is 2.5W.
9. What is the typical turn-on delay time for SQ2351ES-T1_GE3?
The typical turn-on delay time for SQ2351ES-T1_GE3 is 10ns.
10. What is the maximum storage temperature for SQ2351ES-T1_GE3?
The maximum storage temperature for SQ2351ES-T1_GE3 is -55°C to 175°C.
The maximum drain-source voltage for SQ2351ES-T1_GE3 is 20V.
2. What is the typical on-resistance for SQ2351ES-T1_GE3?
The typical on-resistance for SQ2351ES-T1_GE3 is 45mΩ.
3. What is the maximum continuous drain current for SQ2351ES-T1_GE3?
The maximum continuous drain current for SQ2351ES-T1_GE3 is 100A.
4. What is the gate threshold voltage for SQ2351ES-T1_GE3?
The gate threshold voltage for SQ2351ES-T1_GE3 is typically 2.5V.
5. What is the maximum junction temperature for SQ2351ES-T1_GE3?
The maximum junction temperature for SQ2351ES-T1_GE3 is 175°C.
6. What is the input capacitance for SQ2351ES-T1_GE3?
The input capacitance for SQ2351ES-T1_GE3 is typically 6800pF.
7. What is the total gate charge for SQ2351ES-T1_GE3?
The total gate charge for SQ2351ES-T1_GE3 is typically 40nC.
8. What is the maximum power dissipation for SQ2351ES-T1_GE3?
The maximum power dissipation for SQ2351ES-T1_GE3 is 2.5W.
9. What is the typical turn-on delay time for SQ2351ES-T1_GE3?
The typical turn-on delay time for SQ2351ES-T1_GE3 is 10ns.
10. What is the maximum storage temperature for SQ2351ES-T1_GE3?
The maximum storage temperature for SQ2351ES-T1_GE3 is -55°C to 175°C.
SQ2351ES-T1_GE3 Seotud märksõnad
:
SQ2351ES-T1_GE3 Hind
SQ2351ES-T1_GE3 Maalimine
SQ2351ES-T1_GE3 Tihvtide pinge
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