BGD816L,112 NXP USA Inc. IC AMP GAIN PWR 860MHZ SOT115J
Integraallülitused (IC-d)
Tootja number:
BGD816L,112
Tootja:
Tootekategooria:
Kirjeldus:
IC AMP GAIN PWR 860MHZ SOT115J
RoHs olek:
Pliivaba / RoHS-iga ühilduv Andmetabelid:
BGD816L,112 Andmetabelid(PDF)
-3 db ribalaius :
-
Osa olek :
Obsolete
Paigaldustüüp :
-
Pakend/ümbris :
SOT-115J
Pakendamine :
Bulk
Pinge – toide, üks/kaks (±) :
-
Pöördekiirus :
-
Praegune – pakkumine :
360mA
Praegune – väljund / kanal :
-
Rakendused :
CATV
seeria :
-
Tarnija seadmepakett :
SOT115J
Väljundi tüüp :
-
Vooluahelate arv :
1
Laos
46,216
Ühiku hind:
Võtke meiega ühendust Pakkumine
BGD816L,112 Konkurentsivõimelised hinnad
ChipIcil on ainulaadne tarneallikas. Pakume oma klientidele BGD816L,112 konkurentsivõimelise hinnaga. Saate nautida meie parimat teenust, ostes ChipIc BGD816L,112. Parima hinna saamiseks saidil BGD816L,112 võtke meiega ühendust.
Hinnapakkumise saamiseks klõpsake
BGD816L,112 Iseärasused
BGD816L,112 is produced by NXP USA Inc., belongs to Lineaarne - Võimendid - Videomoodulid ja moodulid.
BGD816L,112 Toote üksikasjad
:
BGD816L,112 – Lineaarne - Võimendid - Videomoodulid ja moodulid disainitud puhvervõimendid ja toodetud NXP USA Inc..
BGD816L,112, mida pakub NXP USA Inc., saab osta CHIPMLCC-st.
Siit leiate erinevaid juhtivate tootjate elektroonilisi osi rahu.
CHIPMLCC BGD816L,112 on range kvaliteedikontrolliga ja nõuetele vastav kõike nõuetele.
CHIPMLCC-s näidatud fondi staatus on ainult viitamiseks.
Kui te ei leia otsitavat osa, võtke meiega ühendust lisateavet, näiteks varude arvu andmetabelis BGD816L,112 (PDF), hind BGD816L,112, Pinout BGD816L,112, manuaal BGD816L,112 Ja BGD816L,112 asenduslahendus.
BGD816L,112, mida pakub NXP USA Inc., saab osta CHIPMLCC-st.
Siit leiate erinevaid juhtivate tootjate elektroonilisi osi rahu.
CHIPMLCC BGD816L,112 on range kvaliteedikontrolliga ja nõuetele vastav kõike nõuetele.
CHIPMLCC-s näidatud fondi staatus on ainult viitamiseks.
Kui te ei leia otsitavat osa, võtke meiega ühendust lisateavet, näiteks varude arvu andmetabelis BGD816L,112 (PDF), hind BGD816L,112, Pinout BGD816L,112, manuaal BGD816L,112 Ja BGD816L,112 asenduslahendus.
BGD816L,112 FAQ
:
1. What is the maximum continuous collector current (IC) for BGD816L,112?
The maximum continuous collector current (IC) for BGD816L,112 is 8 A.
2. What is the maximum collector-emitter voltage (VCE) for BGD816L,112?
The maximum collector-emitter voltage (VCE) for BGD816L,112 is 100 V.
3. What is the maximum power dissipation (Ptot) for BGD816L,112?
The maximum power dissipation (Ptot) for BGD816L,112 is 125 W.
4. What is the typical DC current gain (hFE) for BGD816L,112?
The typical DC current gain (hFE) for BGD816L,112 is 40.
5. What is the thermal resistance junction to ambient (RthJA) for BGD816L,112?
The thermal resistance junction to ambient (RthJA) for BGD816L,112 is 62 °C/W.
6. What is the storage temperature range for BGD816L,112?
The storage temperature range for BGD816L,112 is -65 to +150 °C.
7. What is the operating junction temperature (Tj) for BGD816L,112?
The operating junction temperature (Tj) for BGD816L,112 is -40 to +150 °C.
8. What is the gate-source threshold voltage (VGS(th)) for BGD816L,112?
The gate-source threshold voltage (VGS(th)) for BGD816L,112 is 1.5 V.
9. What is the input capacitance (Ciss) for BGD816L,112?
The input capacitance (Ciss) for BGD816L,112 is 1100 pF.
10. What is the output capacitance (Coss) for BGD816L,112?
The output capacitance (Coss) for BGD816L,112 is 180 pF.
The maximum continuous collector current (IC) for BGD816L,112 is 8 A.
2. What is the maximum collector-emitter voltage (VCE) for BGD816L,112?
The maximum collector-emitter voltage (VCE) for BGD816L,112 is 100 V.
3. What is the maximum power dissipation (Ptot) for BGD816L,112?
The maximum power dissipation (Ptot) for BGD816L,112 is 125 W.
4. What is the typical DC current gain (hFE) for BGD816L,112?
The typical DC current gain (hFE) for BGD816L,112 is 40.
5. What is the thermal resistance junction to ambient (RthJA) for BGD816L,112?
The thermal resistance junction to ambient (RthJA) for BGD816L,112 is 62 °C/W.
6. What is the storage temperature range for BGD816L,112?
The storage temperature range for BGD816L,112 is -65 to +150 °C.
7. What is the operating junction temperature (Tj) for BGD816L,112?
The operating junction temperature (Tj) for BGD816L,112 is -40 to +150 °C.
8. What is the gate-source threshold voltage (VGS(th)) for BGD816L,112?
The gate-source threshold voltage (VGS(th)) for BGD816L,112 is 1.5 V.
9. What is the input capacitance (Ciss) for BGD816L,112?
The input capacitance (Ciss) for BGD816L,112 is 1100 pF.
10. What is the output capacitance (Coss) for BGD816L,112?
The output capacitance (Coss) for BGD816L,112 is 180 pF.
BGD816L,112 Seotud märksõnad
:
BGD816L,112 Hind
BGD816L,112 Maalimine
BGD816L,112 Tihvtide pinge
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Minimaalne tellimus: 1
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