BD676 ON Semiconductor TRANS PNP DARL 45V 4A TO225
Diskreetsed pooljuhid
Tootja number:
BD676
Tootja:
Tootekategooria:
Kirjeldus:
TRANS PNP DARL 45V 4A TO225
RoHs olek:
Andmetabelid:
BD676 Andmetabelid(PDF)
Alalisvoolu võimendus (hFE) (min) @ Ic, Vce :
750 @ 1.5A, 3V
Osa olek :
Obsolete
Paigaldustüüp :
Through Hole
Pakend/ümbris :
TO-225AA, TO-126-3
Pakendamine :
Bulk
Pinge – kollektori emitteri rike (maksimaalne) :
45V
Praegune – kollektori katkestus (maksimaalne) :
500µA
Sagedus – üleminek :
-
seeria :
-
Tarnija seadmepakett :
TO-225AA
Töötemperatuur :
-55°C ~ 150°C (TJ)
Transistori tüüp :
PNP - Darlington
Vce Saturation (Max) @ Ib, Ic :
2.5V @ 30mA, 1.5A
Võimsus – max :
40W
Vool – koguja (Ic) (maksimaalne) :
4A
Laos
14,700
Ühiku hind:
Võtke meiega ühendust Pakkumine
BD676 Konkurentsivõimelised hinnad
ChipIcil on ainulaadne tarneallikas. Pakume oma klientidele BD676 konkurentsivõimelise hinnaga. Saate nautida meie parimat teenust, ostes ChipIc BD676. Parima hinna saamiseks saidil BD676 võtke meiega ühendust.
Hinnapakkumise saamiseks klõpsake
BD676 Iseärasused
BD676 is produced by ON Semiconductor, belongs to Transistorid – bipolaarsed (BJT) – ühekordsed.
BD676 Toote üksikasjad
:
BD676 – Transistorid – bipolaarsed (BJT) – ühekordsed disainitud puhvervõimendid ja toodetud ON Semiconductor.
BD676, mida pakub ON Semiconductor, saab osta CHIPMLCC-st.
Siit leiate erinevaid juhtivate tootjate elektroonilisi osi rahu.
CHIPMLCC BD676 on range kvaliteedikontrolliga ja nõuetele vastav kõike nõuetele.
CHIPMLCC-s näidatud fondi staatus on ainult viitamiseks.
Kui te ei leia otsitavat osa, võtke meiega ühendust lisateavet, näiteks varude arvu andmetabelis BD676 (PDF), hind BD676, Pinout BD676, manuaal BD676 Ja BD676 asenduslahendus.
BD676, mida pakub ON Semiconductor, saab osta CHIPMLCC-st.
Siit leiate erinevaid juhtivate tootjate elektroonilisi osi rahu.
CHIPMLCC BD676 on range kvaliteedikontrolliga ja nõuetele vastav kõike nõuetele.
CHIPMLCC-s näidatud fondi staatus on ainult viitamiseks.
Kui te ei leia otsitavat osa, võtke meiega ühendust lisateavet, näiteks varude arvu andmetabelis BD676 (PDF), hind BD676, Pinout BD676, manuaal BD676 Ja BD676 asenduslahendus.
BD676 FAQ
:
1. What is the maximum collector current of the BD676 power transistor?
The maximum collector current of the BD676 power transistor is 4 amperes.
2. What is the maximum collector-emitter voltage rating of the BD676?
The maximum collector-emitter voltage rating of the BD676 is 45 volts.
3. What is the typical DC current gain (hFE) of the BD676 at a collector current of 1 ampere?
The typical DC current gain (hFE) of the BD676 at a collector current of 1 ampere is 40.
4. What is the power dissipation of the BD676 in a TO-126 package at 25°C ambient temperature?
The power dissipation of the BD676 in a TO-126 package at 25°C ambient temperature is 65 watts.
5. What is the thermal resistance junction to case (RθJC) of the BD676 in a TO-126 package?
The thermal resistance junction to case (RθJC) of the BD676 in a TO-126 package is 3.125°C/W.
6. What is the storage temperature range for the BD676 transistor?
The storage temperature range for the BD676 transistor is -65°C to 150°C.
7. What is the maximum junction temperature of the BD676 transistor?
The maximum junction temperature of the BD676 transistor is 150°C.
8. What is the recommended soldering temperature and duration for the BD676 transistor?
The recommended soldering temperature for the BD676 transistor is 260°C for 10 seconds.
9. What is the safe operating area (SOA) of the BD676 transistor?
The safe operating area (SOA) of the BD676 transistor is specified in the datasheet graph.
10. What are the typical applications for the BD676 power transistor?
The typical applications for the BD676 power transistor include audio amplifiers, power regulators, and motor control circuits.
The maximum collector current of the BD676 power transistor is 4 amperes.
2. What is the maximum collector-emitter voltage rating of the BD676?
The maximum collector-emitter voltage rating of the BD676 is 45 volts.
3. What is the typical DC current gain (hFE) of the BD676 at a collector current of 1 ampere?
The typical DC current gain (hFE) of the BD676 at a collector current of 1 ampere is 40.
4. What is the power dissipation of the BD676 in a TO-126 package at 25°C ambient temperature?
The power dissipation of the BD676 in a TO-126 package at 25°C ambient temperature is 65 watts.
5. What is the thermal resistance junction to case (RθJC) of the BD676 in a TO-126 package?
The thermal resistance junction to case (RθJC) of the BD676 in a TO-126 package is 3.125°C/W.
6. What is the storage temperature range for the BD676 transistor?
The storage temperature range for the BD676 transistor is -65°C to 150°C.
7. What is the maximum junction temperature of the BD676 transistor?
The maximum junction temperature of the BD676 transistor is 150°C.
8. What is the recommended soldering temperature and duration for the BD676 transistor?
The recommended soldering temperature for the BD676 transistor is 260°C for 10 seconds.
9. What is the safe operating area (SOA) of the BD676 transistor?
The safe operating area (SOA) of the BD676 transistor is specified in the datasheet graph.
10. What are the typical applications for the BD676 power transistor?
The typical applications for the BD676 power transistor include audio amplifiers, power regulators, and motor control circuits.
BD676 Seotud märksõnad
:
BD676 Hind
BD676 Maalimine
BD676 Tihvtide pinge
Pakkumised: Kiire hinnapakkumise kontroll
Minimaalne tellimus: 1
Sisaldab "BD67" seeria tooteid
