BD676A ON Semiconductor TRANS PNP DARL 45V 4A TO225
Diskreetsed pooljuhid
Tootja number:
BD676A
Tootja:
Tootekategooria:
Kirjeldus:
TRANS PNP DARL 45V 4A TO225
RoHs olek:
Andmetabelid:
BD676A Andmetabelid(PDF)
Alalisvoolu võimendus (hFE) (min) @ Ic, Vce :
750 @ 2A, 3V
Osa olek :
Obsolete
Paigaldustüüp :
Through Hole
Pakend/ümbris :
TO-225AA, TO-126-3
Pakendamine :
Bulk
Pinge – kollektori emitteri rike (maksimaalne) :
45V
Praegune – kollektori katkestus (maksimaalne) :
500µA
Sagedus – üleminek :
-
seeria :
-
Tarnija seadmepakett :
TO-225AA
Töötemperatuur :
-55°C ~ 150°C (TJ)
Transistori tüüp :
PNP - Darlington
Vce Saturation (Max) @ Ib, Ic :
2.8V @ 40mA, 2A
Võimsus – max :
40W
Vool – koguja (Ic) (maksimaalne) :
4A
Laos
17,241
Ühiku hind:
Võtke meiega ühendust Pakkumine
BD676A Konkurentsivõimelised hinnad
ChipIcil on ainulaadne tarneallikas. Pakume oma klientidele BD676A konkurentsivõimelise hinnaga. Saate nautida meie parimat teenust, ostes ChipIc BD676A. Parima hinna saamiseks saidil BD676A võtke meiega ühendust.
Hinnapakkumise saamiseks klõpsake
BD676A Iseärasused
BD676A is produced by ON Semiconductor, belongs to Transistorid – bipolaarsed (BJT) – ühekordsed.
BD676A Toote üksikasjad
:
BD676A – Transistorid – bipolaarsed (BJT) – ühekordsed disainitud puhvervõimendid ja toodetud ON Semiconductor.
BD676A, mida pakub ON Semiconductor, saab osta CHIPMLCC-st.
Siit leiate erinevaid juhtivate tootjate elektroonilisi osi rahu.
CHIPMLCC BD676A on range kvaliteedikontrolliga ja nõuetele vastav kõike nõuetele.
CHIPMLCC-s näidatud fondi staatus on ainult viitamiseks.
Kui te ei leia otsitavat osa, võtke meiega ühendust lisateavet, näiteks varude arvu andmetabelis BD676A (PDF), hind BD676A, Pinout BD676A, manuaal BD676A Ja BD676A asenduslahendus.
BD676A, mida pakub ON Semiconductor, saab osta CHIPMLCC-st.
Siit leiate erinevaid juhtivate tootjate elektroonilisi osi rahu.
CHIPMLCC BD676A on range kvaliteedikontrolliga ja nõuetele vastav kõike nõuetele.
CHIPMLCC-s näidatud fondi staatus on ainult viitamiseks.
Kui te ei leia otsitavat osa, võtke meiega ühendust lisateavet, näiteks varude arvu andmetabelis BD676A (PDF), hind BD676A, Pinout BD676A, manuaal BD676A Ja BD676A asenduslahendus.
BD676A FAQ
:
1. What is the maximum collector current (IC) rating for the BD676A power transistor?
The maximum collector current (IC) rating for the BD676A power transistor is 4 amperes.
2. What is the maximum collector-emitter voltage (VCEO) for the BD676A transistor?
The maximum collector-emitter voltage (VCEO) for the BD676A transistor is 45 volts.
3. What is the power dissipation (PD) of the BD676A transistor at 25°C?
The power dissipation (PD) of the BD676A transistor at 25°C is 40 watts.
4. Can the BD676A transistor handle high-frequency applications?
Yes, the BD676A transistor is suitable for high-frequency applications due to its fast switching characteristics.
5. What is the typical DC current gain (hFE) of the BD676A transistor?
The typical DC current gain (hFE) of the BD676A transistor is 30 to 160.
6. Is the BD676A transistor suitable for use in audio amplifier circuits?
Yes, the BD676A transistor is commonly used in audio amplifier circuits due to its high current and voltage ratings.
7. What is the junction temperature (Tj) limit for the BD676A transistor?
The junction temperature (Tj) limit for the BD676A transistor is 150°C.
8. Does the BD676A transistor require a heatsink for proper thermal management?
Yes, it is recommended to use a heatsink with the BD676A transistor to ensure proper thermal management, especially in high-power applications.
9. What is the storage temperature range for the BD676A transistor?
The storage temperature range for the BD676A transistor is -65°C to 150°C.
10. Can the BD676A transistor be used in switching power supply designs?
Yes, the BD676A transistor is well-suited for switching power supply designs due to its high current and voltage capabilities.
The maximum collector current (IC) rating for the BD676A power transistor is 4 amperes.
2. What is the maximum collector-emitter voltage (VCEO) for the BD676A transistor?
The maximum collector-emitter voltage (VCEO) for the BD676A transistor is 45 volts.
3. What is the power dissipation (PD) of the BD676A transistor at 25°C?
The power dissipation (PD) of the BD676A transistor at 25°C is 40 watts.
4. Can the BD676A transistor handle high-frequency applications?
Yes, the BD676A transistor is suitable for high-frequency applications due to its fast switching characteristics.
5. What is the typical DC current gain (hFE) of the BD676A transistor?
The typical DC current gain (hFE) of the BD676A transistor is 30 to 160.
6. Is the BD676A transistor suitable for use in audio amplifier circuits?
Yes, the BD676A transistor is commonly used in audio amplifier circuits due to its high current and voltage ratings.
7. What is the junction temperature (Tj) limit for the BD676A transistor?
The junction temperature (Tj) limit for the BD676A transistor is 150°C.
8. Does the BD676A transistor require a heatsink for proper thermal management?
Yes, it is recommended to use a heatsink with the BD676A transistor to ensure proper thermal management, especially in high-power applications.
9. What is the storage temperature range for the BD676A transistor?
The storage temperature range for the BD676A transistor is -65°C to 150°C.
10. Can the BD676A transistor be used in switching power supply designs?
Yes, the BD676A transistor is well-suited for switching power supply designs due to its high current and voltage capabilities.
BD676A Seotud märksõnad
:
BD676A Hind
BD676A Maalimine
BD676A Tihvtide pinge
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