BD676AG ON Semiconductor TRANS PNP DARL 45V 4A TO225
Diskreetsed pooljuhid
Tootja number:
BD676AG
Tootja:
Tootekategooria:
Kirjeldus:
TRANS PNP DARL 45V 4A TO225
RoHs olek:
Pliivaba / RoHS-iga ühilduv Andmetabelid:
BD676AG Andmetabelid(PDF)
Alalisvoolu võimendus (hFE) (min) @ Ic, Vce :
750 @ 2A, 3V
Osa olek :
Active
Paigaldustüüp :
Through Hole
Pakend/ümbris :
TO-225AA, TO-126-3
Pakendamine :
Bulk
Pinge – kollektori emitteri rike (maksimaalne) :
45V
Praegune – kollektori katkestus (maksimaalne) :
500µA
Sagedus – üleminek :
-
seeria :
-
Tarnija seadmepakett :
TO-225AA
Töötemperatuur :
-55°C ~ 150°C (TJ)
Transistori tüüp :
PNP - Darlington
Vce Saturation (Max) @ Ib, Ic :
2.8V @ 40mA, 2A
Võimsus – max :
40W
Vool – koguja (Ic) (maksimaalne) :
4A
Laos
26,332
Ühiku hind:
Võtke meiega ühendust Pakkumine
BD676AG Konkurentsivõimelised hinnad
ChipIcil on ainulaadne tarneallikas. Pakume oma klientidele BD676AG konkurentsivõimelise hinnaga. Saate nautida meie parimat teenust, ostes ChipIc BD676AG. Parima hinna saamiseks saidil BD676AG võtke meiega ühendust.
Hinnapakkumise saamiseks klõpsake
BD676AG Iseärasused
BD676AG is produced by ON Semiconductor, belongs to Transistorid – bipolaarsed (BJT) – ühekordsed.
BD676AG Toote üksikasjad
:
BD676AG – Transistorid – bipolaarsed (BJT) – ühekordsed disainitud puhvervõimendid ja toodetud ON Semiconductor.
BD676AG, mida pakub ON Semiconductor, saab osta CHIPMLCC-st.
Siit leiate erinevaid juhtivate tootjate elektroonilisi osi rahu.
CHIPMLCC BD676AG on range kvaliteedikontrolliga ja nõuetele vastav kõike nõuetele.
CHIPMLCC-s näidatud fondi staatus on ainult viitamiseks.
Kui te ei leia otsitavat osa, võtke meiega ühendust lisateavet, näiteks varude arvu andmetabelis BD676AG (PDF), hind BD676AG, Pinout BD676AG, manuaal BD676AG Ja BD676AG asenduslahendus.
BD676AG, mida pakub ON Semiconductor, saab osta CHIPMLCC-st.
Siit leiate erinevaid juhtivate tootjate elektroonilisi osi rahu.
CHIPMLCC BD676AG on range kvaliteedikontrolliga ja nõuetele vastav kõike nõuetele.
CHIPMLCC-s näidatud fondi staatus on ainult viitamiseks.
Kui te ei leia otsitavat osa, võtke meiega ühendust lisateavet, näiteks varude arvu andmetabelis BD676AG (PDF), hind BD676AG, Pinout BD676AG, manuaal BD676AG Ja BD676AG asenduslahendus.
BD676AG FAQ
:
1. What is the maximum collector current of the BD676AG power transistor?
The maximum collector current of the BD676AG power transistor is 4A.
2. What is the maximum collector-emitter voltage rating of the BD676AG?
The maximum collector-emitter voltage rating of the BD676AG is 45V.
3. What is the power dissipation of the BD676AG at 25°C ambient temperature?
The power dissipation of the BD676AG at 25°C ambient temperature is 40W.
4. Can the BD676AG be used for high-power audio amplifier applications?
Yes, the BD676AG can be used for high-power audio amplifier applications due to its high power dissipation capability.
5. What is the typical DC current gain (hFE) of the BD676AG at IC = 3A?
The typical DC current gain (hFE) of the BD676AG at IC = 3A is 15.
6. Is the BD676AG suitable for use in switching applications?
Yes, the BD676AG is suitable for use in switching applications due to its high collector current and voltage ratings.
7. What is the thermal resistance junction to case (RthJC) of the BD676AG?
The thermal resistance junction to case (RthJC) of the BD676AG is 1.67°C/W.
8. Can the BD676AG withstand high operating temperatures?
Yes, the BD676AG can withstand high operating temperatures with proper heat sinking and thermal management.
9. What is the storage temperature range for the BD676AG?
The storage temperature range for the BD676AG is -65°C to 150°C.
10. Does the BD676AG require any special handling or precautions during assembly?
The BD676AG requires careful handling during assembly to prevent damage to the sensitive semiconductor components. Proper ESD precautions should be followed.
The maximum collector current of the BD676AG power transistor is 4A.
2. What is the maximum collector-emitter voltage rating of the BD676AG?
The maximum collector-emitter voltage rating of the BD676AG is 45V.
3. What is the power dissipation of the BD676AG at 25°C ambient temperature?
The power dissipation of the BD676AG at 25°C ambient temperature is 40W.
4. Can the BD676AG be used for high-power audio amplifier applications?
Yes, the BD676AG can be used for high-power audio amplifier applications due to its high power dissipation capability.
5. What is the typical DC current gain (hFE) of the BD676AG at IC = 3A?
The typical DC current gain (hFE) of the BD676AG at IC = 3A is 15.
6. Is the BD676AG suitable for use in switching applications?
Yes, the BD676AG is suitable for use in switching applications due to its high collector current and voltage ratings.
7. What is the thermal resistance junction to case (RthJC) of the BD676AG?
The thermal resistance junction to case (RthJC) of the BD676AG is 1.67°C/W.
8. Can the BD676AG withstand high operating temperatures?
Yes, the BD676AG can withstand high operating temperatures with proper heat sinking and thermal management.
9. What is the storage temperature range for the BD676AG?
The storage temperature range for the BD676AG is -65°C to 150°C.
10. Does the BD676AG require any special handling or precautions during assembly?
The BD676AG requires careful handling during assembly to prevent damage to the sensitive semiconductor components. Proper ESD precautions should be followed.
BD676AG Seotud märksõnad
:
BD676AG Hind
BD676AG Maalimine
BD676AG Tihvtide pinge
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Minimaalne tellimus: 1
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